In this study, the effectiveness of AlGaN/GaN MOSHEMT with the inclusion of single-material-gate (SMG) and dual-material-gate (DMG) designs is examined. The higher transconductance, cut-off frequency and maximum oscillation frequency are essential components in Analog/RF uses and are produced by the DMG configuration. In this work, two different gate metal work functions (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="13369_2024_9924_Article_IEq1.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="13" /> </InlineMediaObject> <EquationSource Format="TEX">$\Phi $</EquationSource> <EquationSource Format="MATHML"><math> <mi mathvariant="normal">Φ</mi> </math></EquationSource> </InlineEquation>) have been used, so the electric field (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="13369_2024_9924_Article_IEq2.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">$\vec {E}$</EquationSource> <EquationSource Format="MATHML"><math> <mover accent="true"> <mi>E</mi> <mo stretchy="false">→</mo> </mover> </math></EquationSource> </InlineEquation>) and electron velocity (<InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="13369_2024_9924_Article_IEq3.gif" Format="GIF" Height="15" Rendition="HTML" Resolution="72" Type="Linedraw" Width="14" /> </InlineMediaObject> <EquationSource Format="TEX">$\vec {v}$</EquationSource> <EquationSource Format="MATHML"><math> <mover accent="true"> <mi>v</mi> <mo stretchy="false">→</mo> </mover> </math></EquationSource> </InlineEquation>) are distributed uniformly in the GaN Channel. This obtained results of gm, fT, and fmax for the DMG devices are 14.28%, 10.6%, and 34.2% higher than the SMG devices, respectively. This outcome also shows better performance for Analog/RF performance parameters such as AV, TFP, GFP and GTFP for DMG configuration than SMG. The linearity parameters of SMG, like gm2, gm3, VIP2, VIP3, IIP3, IMD3, and P1dB show slightly better responses than the DMG. These findings suggest that the DMG AlGaN/GaN MOSHEMT can be used in applications that require high power and higher frequencies with signal amplification capabilities, while single metal gate devices show marginally improved linearity and low distortion-less profiles.

Advancing Electrical and Analog/RF Performance in Dual-Gate AlGaN/GaN MOSHEMT for High-Power and High-Frequency Applications

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发表日期：

2025年1月7日

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Abdul Naim Khan,
K. Jena,
Gaurav Chatterjee,
Meenakshi Chauhan,
Trupti Ranjan Lenka

摘要

In this study, the effectiveness of AlGaN/GaN MOSHEMT with the inclusion of single-material-gate (SMG) and dual-material-gate (DMG) designs is examined. The higher transconductance, cut-off frequency and maximum oscillation frequency are essential components in Analog/RF uses and are produced by the DMG configuration. In this work, two different gate metal work functions ( $\Phi $ $Φ$ ) have been used, so the electric field ( $\vec {E}$ $\vec{E}$ ) and electron velocity ( $\vec {v}$ $\vec{v}$ ) are distributed uniformly in the GaN Channel. This obtained results of g_m, f_T, and f_max for the DMG devices are 14.28%, 10.6%, and 34.2% higher than the SMG devices, respectively. This outcome also shows better performance for Analog/RF performance parameters such as A_V, TFP, GFP and GTFP for DMG configuration than SMG. The linearity parameters of SMG, like g_m2, g_m3, VIP2, VIP3, IIP3, IMD3, and P1dB show slightly better responses than the DMG. These findings suggest that the DMG AlGaN/GaN MOSHEMT can be used in applications that require high power and higher frequencies with signal amplification capabilities, while single metal gate devices show marginally improved linearity and low distortion-less profiles.