<p>This study conducts a comprehensive analysis of the noise characteristics of a heterojunction double gate ferroelectric p-n-i-n tunnel field-effect transistor (HJ DG Fe p-n-i-n TFET), focusing on generation-recombination (G-R), flicker (1/f), and diffusion noise components, while modulating the thickness of the ferroelectric layer in the gate stack at various operating frequencies. This research relies on the output current noise power spectral density (S_ID) and the input voltage noise power spectral density (S_VG) derived from TCAD simulation approach. This study also examines the effects of both donor and acceptor ITCs, along with the influence of changes in temperature on the noise characteristics of the device. The analysis indicates that G-R noise predominates in the very low frequency range, while flicker noise is prevalent in the low to mid frequency range, with diffusion noise components becoming more pronounced in high frequency domains. A comparison is made between the S_ID and S_VG of several noise components of the proposed device and existing state-of-the-art TFET devices. Furthermore, this study provides an important finding for lowering noise components using ferroelectric material in the gate stack, which is preferable for high-end analog, digital along with various IoT applications.</p>