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<p>CZTS-based solar cells have attracted significant attention due to the natural abundance of their constituent elements and their high theoretical power conversion efficiency. However, the formation of secondary phases that easily occur in the CZTS structure prevents approaching the theoretical limit. In addition, interface defects are another significant factor that decreases the solar cell device efficiency. Identifying and understanding these defects is essential for improving device efficiency. Advanced characterization techniques such as XRD, Raman, and XPS are commonly used to investigate structural and compositional properties of CZTS materials. These methods provide detailed information, but they require specialized equipment and can be more time-consuming. In contrast, electrical measurements such as <i>I</i>-<i>V</i> characterization are relatively simple and widely accessible, and they can still provide useful information about the device behavior. Detailed <i>I</i>-<i>V</i> analysis and parameter extraction methods are often performed using computational fitting tools, which provide accurate and efficient results. On the other hand, simple analytical approaches can still be useful to provide a more direct and step-by-step understanding of the current mechanisms. In this study, CZTS-based p-n diode current was modelled using only experimental data without the need for computational resources. Key diode parameters such as the ideality factor, saturation current and series-shunt resistances were successfully extracted using the realistic diode equation. Structural and interfacial defects were evaluated through the device variables.</p>

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A simple analytical model for CZTS-based heterojunctions derived from I-V output data

  • 期刊论文

  • 发表日期：

    2026年7月19日

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  • Teoman Özdal,
  • Hamide Kavak

摘要

CZTS-based solar cells have attracted significant attention due to the natural abundance of their constituent elements and their high theoretical power conversion efficiency. However, the formation of secondary phases that easily occur in the CZTS structure prevents approaching the theoretical limit. In addition, interface defects are another significant factor that decreases the solar cell device efficiency. Identifying and understanding these defects is essential for improving device efficiency. Advanced characterization techniques such as XRD, Raman, and XPS are commonly used to investigate structural and compositional properties of CZTS materials. These methods provide detailed information, but they require specialized equipment and can be more time-consuming. In contrast, electrical measurements such as I-V characterization are relatively simple and widely accessible, and they can still provide useful information about the device behavior. Detailed I-V analysis and parameter extraction methods are often performed using computational fitting tools, which provide accurate and efficient results. On the other hand, simple analytical approaches can still be useful to provide a more direct and step-by-step understanding of the current mechanisms. In this study, CZTS-based p-n diode current was modelled using only experimental data without the need for computational resources. Key diode parameters such as the ideality factor, saturation current and series-shunt resistances were successfully extracted using the realistic diode equation. Structural and interfacial defects were evaluated through the device variables.