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<p>Graphene oxide (GO), acid-functionalized GO (GO-AC), and amine-functionalized GO (GO-AM) were synthesized and comparatively analyzed to study the effects of surface modifications and sample thickness on structural and dielectric properties. UV–Visible spectra showed redshifts upon functionalization, while FTIR confirmed the presence of carboxyl and amine groups. XRD revealed decreasing crystallite sizes, and Raman analysis indicated increasing disorder from GO to GO-AC and to GO-AM. EDX verified surface modifications, showing varied C/O ratios. Dielectric studies revealed a shift of loss tangent to lower frequencies with increasing thickness. GO-AM exhibited the highest capacitance, dielectric permittivity, dielectric loss and electrical conductivity, while GO and GO-AC showed moderate and suppressed dielectric response respectively. Cole–Cole and modulus analyses indicated reasonable relaxation in GO, restricted polarization in GO-AC, and strong dielectric dispersion in GO-AM. Impedance and Nyquist plots confirmed improved charge transport in GO-AM and higher resistivity in GO-AC. Overall, GO-AM exhibited superior dielectric and conductive performance, making it a promising material for energy storage and electronic applications.</p>

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Synthesis, dielectric, conductivity, and impedance spectroscopy of surface modified graphene oxide: effects of frequency and thickness

  • 期刊论文

  • 发表日期：

    2026年7月22日

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  • Devendra Patel,
  • Shyama Prasad Mahapatra

摘要

Graphene oxide (GO), acid-functionalized GO (GO-AC), and amine-functionalized GO (GO-AM) were synthesized and comparatively analyzed to study the effects of surface modifications and sample thickness on structural and dielectric properties. UV–Visible spectra showed redshifts upon functionalization, while FTIR confirmed the presence of carboxyl and amine groups. XRD revealed decreasing crystallite sizes, and Raman analysis indicated increasing disorder from GO to GO-AC and to GO-AM. EDX verified surface modifications, showing varied C/O ratios. Dielectric studies revealed a shift of loss tangent to lower frequencies with increasing thickness. GO-AM exhibited the highest capacitance, dielectric permittivity, dielectric loss and electrical conductivity, while GO and GO-AC showed moderate and suppressed dielectric response respectively. Cole–Cole and modulus analyses indicated reasonable relaxation in GO, restricted polarization in GO-AC, and strong dielectric dispersion in GO-AM. Impedance and Nyquist plots confirmed improved charge transport in GO-AM and higher resistivity in GO-AC. Overall, GO-AM exhibited superior dielectric and conductive performance, making it a promising material for energy storage and electronic applications.