Impact of Sn on structural, optical and electrical properties of CdO nanoparticles prepared by solid state reaction for optoelectronic applications
摘要
Pure and tin doped cadmium oxide (Cd1-xSnxO) nanoparticles at different Sn concentrations (x = 0, 0.03, 0.05, and 0.07) were prepared using simple, low-cost solid-state reaction and subjected to various characterization techniques. Cubic structure with polycrystalline nature was confirmed from X-ray diffraction profile. Furthermore, nanoparticles size, dislocation density, strain, interplanar spacing and lattice constant were also calculated from the XRD profile. Fourier-transform infrared (FT-IR) spectra were recorded for all the prepared nanoparticles in the energy range of 400–1400 cm−1 and from this, the metal–oxygen (M–O) stretching vibrations were confirmed. Optical properties such as optical absorbance and reflectance spectra were recorded using UV–Vis-NIR spectrophotometer and found increase in reflectance with increase of tin (Sn) concentration. From this optical data, the optical band gap (Eg) of the nanoparticles was calculated using Tauc’s relation and it was observed that when Sn concentration increased from x = 0 to x = 0.07, the optical band gap also increased from 1.65 to 1.92 eV. The photoluminescence (PL) spectra were recorded in the wavelength range of 350–600 nm and a broad emission peak was observed at ~ 430 nm. The PL data was used for plotting the CIE graphs and that graphs indicated that the prepared nanoparticles are good fit for the blue-green light emitting diodes (LED). The electrical resistivity of the nanoparticles was calculated from current versus voltage (I-V) characteristics, and it decreased with Sn concentration.