In this study, the electrical properties of Ag/n-InP Schottky diode with a rubrene organic interface were systematically investigated over temperature range from 100 to 325 K. The forward current–voltage characteristics of diode were analyzed based on standard thermionic emission theory. The Ag/Rubrene/n-InP diode exhibited excellent rectifying behavior at all temperatures. Analysis of the diode parameters revealed that the barrier height (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">${\Phi }_{B}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="normal">Φ</mi> <mi>B</mi> </msub> </math></EquationSource> </InlineEquation>) increased, whereas the ideality factor (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">$n$</EquationSource> <EquationSource Format="MATHML"><math> <mi>n</mi> </math></EquationSource> </InlineEquation>) decreased with increasing temperature. The observed decrease in barrier height at low temperature values was interpreted using the inhomogeneous barrier model with a double Gaussian distribution. Also, the Richardson constant (<InlineEquation ID="IEq3"> <EquationSource Format="TEX">${A}^{}$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow> <mi>A</mi> </mrow> <mrow /> <mrow> <mrow /> <mo>∗</mo> </mrow> </mmultiscripts> </math></EquationSource> </InlineEquation>) was calculated as 9.460 A/cm2K2 from the modified Richardson plot, which is in excellent agreement with theoretical value determined for n-type InP (<InlineEquation ID="IEq4"> <EquationSource Format="TEX">${A}^{}$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow> <mi>A</mi> </mrow> <mrow /> <mrow> <mrow /> <mo>∗</mo> </mrow> </mmultiscripts> </math></EquationSource> </InlineEquation>= 9.4 A/cm2K2). These results indicate that the inhomogeneities in the Ag/Rubrene/n-InP Schottky barrier diode can be effectively characterized by a Gaussian distribution model. Overall, the findings demonstrate that the Ag/Rubrene/n-InP diode exhibits stable rectification performance over a wide temperature range and represents a promising candidate for potential electronic/optoelectronic device applications.

n-InP based and rubrene interface Schottky diode: Investigation of temperature dependent electrical properties and barrier inhomogeneity

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发表日期：

2026年4月10日

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Ümmühan Akın

摘要

In this study, the electrical properties of Ag/n-InP Schottky diode with a rubrene organic interface were systematically investigated over temperature range from 100 to 325 K. The forward current–voltage characteristics of diode were analyzed based on standard thermionic emission theory. The Ag/Rubrene/n-InP diode exhibited excellent rectifying behavior at all temperatures. Analysis of the diode parameters revealed that the barrier height ( ${\Phi }_{B}$ $Φ_{B}$ ) increased, whereas the ideality factor ( $n$ $n$ ) decreased with increasing temperature. The observed decrease in barrier height at low temperature values was interpreted using the inhomogeneous barrier model with a double Gaussian distribution. Also, the Richardson constant ( ${A}^{*}$ $A^{*}$ ) was calculated as 9.460 A/cm²K² from the modified Richardson plot, which is in excellent agreement with theoretical value determined for n-type InP ( ${A}^{*}$ $A^{*}$ = 9.4 A/cm²K²). These results indicate that the inhomogeneities in the Ag/Rubrene/n-InP Schottky barrier diode can be effectively characterized by a Gaussian distribution model. Overall, the findings demonstrate that the Ag/Rubrene/n-InP diode exhibits stable rectification performance over a wide temperature range and represents a promising candidate for potential electronic/optoelectronic device applications.