<p>Undoped magnesium sulfide (MgS) film and titanium-doped magnesium sulfide (Ti: MgS) films have been successfully grown on FTO glass substrates, at room temperature, using the electrodeposition technique. The percentage of titanium concentration was varied between 2 to 10%, and the doping influence was investigated on the structural, optical, morphological, compositional, and electrical properties of MgS film. XRD results revealed a cubic structural phase of magnesium sulfide with a lattice constant of 5.1913 Å. Crystallite sizes decreased from 28.790 nm to 32.130 nm as the dopant concentration was increased. Absorbance values of the films increased as the percentage of titanium concentration was increased, with the film deposited at 10% concentration showing the highest absorption photon energy of 0.72 (a.u). Transmittance decreased as the dopant concentration was increased. Energy bandgap (E<sub>g</sub>) of 2.80 eV, 2.77 eV, 2.70 eV, and 2.60 eV were obtained for the undoped MgS film, 2%, 6%, and 10% titanium-doped MgS films, respectively. SEM micrographs displayed agglomerated particles of different sizes and shapes, with clear grain boundaries. As the doping percentage increased from 2 to 10%, resistivity values of MgS film decreased from <InlineEquation ID="IEq1"> <EquationSource Format="TEX">$70.86 \times {10}^{-4}\Omega m$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>70.86</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mrow> <mo>-</mo> <mn>4</mn> </mrow> </msup> <mi mathvariant="normal">Ω</mi> <mi>m</mi> </mrow> </math></EquationSource> </InlineEquation> to <InlineEquation ID="IEq2"> <EquationSource Format="TEX">$2.10\times {10}^{-5}\Omega m$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>2.10</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mrow> <mo>-</mo> <mn>5</mn> </mrow> </msup> <mi mathvariant="normal">Ω</mi> <mi>m</mi> </mrow> </math></EquationSource> </InlineEquation>, while the conductivity values increased from <InlineEquation ID="IEq3"> <EquationSource Format="TEX">$1.41\times {10}^{2} S/m$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>1.41</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>2</mn> </msup> <mi>S</mi> <mo stretchy="false">/</mo> <mi>m</mi> </mrow> </math></EquationSource> </InlineEquation> to <InlineEquation ID="IEq4"> <EquationSource Format="TEX">$47.62\times {10}^{2} S/m$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>47.62</mn> <mo>×</mo> <msup> <mrow> <mn>10</mn> </mrow> <mn>2</mn> </msup> <mi>S</mi> <mo stretchy="false">/</mo> <mi>m</mi> </mrow> </math></EquationSource> </InlineEquation>. Varying Ti concentrations modulate the magnetic ordering, Curie temperature, and exchange interactions, which are critical for spintronic device integration. Ti incorporation introduces impurity states and narrows the bandgap, facilitating optical and electronic tunability.</p>

Investigating the influence of doping concentrations on the properties of titanium-doped magnesium sulfide (ti:mgs) thin films, for spintronic applications

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发表日期：

2025年12月6日

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Emmanuel O. Okechukwu.,
Imosobomeh L. Ikhioya,
Azubuike J. Ekpunobi,
A. C. O. Azubogu,
E. N. Onuigbo,
Overcomer Anusiuba,
Adline Nwodo,
Diemiruaye M. Jeroh,
Chukwudi B. Muomeliri,
Chiedozie E. Okafor,
Lynda Ozobialu,
Chiamaka Onu,
Uche E. Ekpunobi,
Nonso L. Okoli,
E. U. Ogbodo

摘要

Undoped magnesium sulfide (MgS) film and titanium-doped magnesium sulfide (Ti: MgS) films have been successfully grown on FTO glass substrates, at room temperature, using the electrodeposition technique. The percentage of titanium concentration was varied between 2 to 10%, and the doping influence was investigated on the structural, optical, morphological, compositional, and electrical properties of MgS film. XRD results revealed a cubic structural phase of magnesium sulfide with a lattice constant of 5.1913 Å. Crystallite sizes decreased from 28.790 nm to 32.130 nm as the dopant concentration was increased. Absorbance values of the films increased as the percentage of titanium concentration was increased, with the film deposited at 10% concentration showing the highest absorption photon energy of 0.72 (a.u). Transmittance decreased as the dopant concentration was increased. Energy bandgap (E_g) of 2.80 eV, 2.77 eV, 2.70 eV, and 2.60 eV were obtained for the undoped MgS film, 2%, 6%, and 10% titanium-doped MgS films, respectively. SEM micrographs displayed agglomerated particles of different sizes and shapes, with clear grain boundaries. As the doping percentage increased from 2 to 10%, resistivity values of MgS film decreased from $70.86 \times {10}^{-4}\Omega m$ $70.86 \times 10^{- 4} Ω m$ to $2.10\times {10}^{-5}\Omega m$ $2.10 \times 10^{- 5} Ω m$ , while the conductivity values increased from $1.41\times {10}^{2} S/m$ $1.41 \times 10^{2} S / m$ to $47.62\times {10}^{2} S/m$ $47.62 \times 10^{2} S / m$ . Varying Ti concentrations modulate the magnetic ordering, Curie temperature, and exchange interactions, which are critical for spintronic device integration. Ti incorporation introduces impurity states and narrows the bandgap, facilitating optical and electronic tunability.