Performance of organic light emitting diode using Iodine doped- Emeraldine base form of PANI (EBPANI) interlayer under optimized condition over fluorine-doped tin oxide (FTO) surface
摘要
In this work, we have created and evaluated high-performance organic light-emitting diodes (OLEDs) with an Emeraldine base form of Polyaniline (EBPANI) buffer layer doped with iodine vapor as a buffer layer over the fluorine doped tin oxide (FTO) surface. In comparison to other devices, we have found that the performance is superior under thermal annealing conditions. We have used the vacuum evaporation method to deposit EBPANI thin films over top FTO substrates in order to investigate the performance of OLED using the buffer layer. Here, we examine each manufactured device's current–voltage and luminance-voltage properties. To improve the device's efficiency, additional analysis was conducted by doping it with iodine. Optimized doping exposure time was used to do iodine doping. We also measure the sheet resistance, optical transmittance and surface morphology of both the single and bilayer electrode surfaces using the Field emission scanning electron microscopy (FE-SEM) images. Here the maximum value of current efficiency is found to be 7.25 Cd/A under optimized conditions.