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<p>Gallium Nitride (GaN) was synthesized through a sequential high-dose ion implantation process into thermally grown SiO<sub>2</sub> on &lt; 100 &gt; oriented silicon substrates; with 206&#xa0;nm thickness of silicon dioxide. Ion implantation was performed at a total dose of 8.2 × 10<sup>16</sup> ions/cm<sup>2</sup>, using multiple energies: 40, 76, and 180 keV for Ga, and 20 and 44 keV for N. This multi-energy approach produced overlapping ion distributions, resulting in gallium and nitrogen concentrations of 5–10 at.% within a depth of approximately 100 nm. The primary objective was to monitor the formation and evolution of GaN nanoparticles within the SiO<sub>2</sub> matrix. Following ion implantation, thermal annealing was essential to repair implantation-induced defects, promote GaN phase formation, and activate dopants. The samples were analyzed using various characterization techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray Diffraction (XRD), and Transmission Electron Microscopy (TEM) for structural evaluation, as well as UV–visible–IR spectroscopy and Photoluminescence (PL) for optical characterization. Simulated UV–Visible spectra revealed a gradual increase in the optical band gap from 3.30 to 3.80&#xa0;eV with increasing annealing temperature, consistent with PL measurements, which indicated band gap energy of approximately 3.23&#xa0;eV.</p>

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Development and study of the physical properties of gallium nitride (GaN) nanoparticles by ion implantation

  • 期刊论文

  • 发表日期：

    2025年11月24日

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  • Fatma Zohra Gasmi,
  • Rafik Chemam,
  • Radouane Graine

摘要

Gallium Nitride (GaN) was synthesized through a sequential high-dose ion implantation process into thermally grown SiO2 on < 100 > oriented silicon substrates; with 206 nm thickness of silicon dioxide. Ion implantation was performed at a total dose of 8.2 × 1016 ions/cm2, using multiple energies: 40, 76, and 180 keV for Ga, and 20 and 44 keV for N. This multi-energy approach produced overlapping ion distributions, resulting in gallium and nitrogen concentrations of 5–10 at.% within a depth of approximately 100 nm. The primary objective was to monitor the formation and evolution of GaN nanoparticles within the SiO2 matrix. Following ion implantation, thermal annealing was essential to repair implantation-induced defects, promote GaN phase formation, and activate dopants. The samples were analyzed using various characterization techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray Diffraction (XRD), and Transmission Electron Microscopy (TEM) for structural evaluation, as well as UV–visible–IR spectroscopy and Photoluminescence (PL) for optical characterization. Simulated UV–Visible spectra revealed a gradual increase in the optical band gap from 3.30 to 3.80 eV with increasing annealing temperature, consistent with PL measurements, which indicated band gap energy of approximately 3.23 eV.