Influence of microwave annealing on the structural, optical, and microwave dielectric properties of NBT thin films
摘要
This study investigates the influence of microwave annealing on the structural and dielectric properties of polycrystalline sodium bismuth titanate (Na0.5Bi0.5)TiO3 (NBT) thin films. NBT films were deposited on fused silica by pulsed laser deposition and annealed in a microwave furnace at 500–575 °C. X-ray diffraction analysis revealed that higher annealing temperatures enhanced the crystalline quality, with the crystallite size increasing from 23 to 28 nm. Raman spectroscopy showed shifts to higher wavenumbers and increased peak intensity, indicating enhanced crystallinity. The optical bandgap decreased from 3.48 to 3.36 eV, while the dielectric constant at 10 GHz rose from 170 to 181 with increasing annealing temperature. These results highlight the crucial role of annealing temperature in tailoring the structural and dielectric properties of NBT thin films, suggesting their potential for use in tunable microwave devices.