SCAPS-1D simulation of high-efficiency SnS/SnS2 QD/WS2 chalcogenide solar cells
摘要
As the demand for sustainable energy grows, thin film solar cells offer a promising alternative to conventional photovoltaics. This work investigates an innovative structured solar cell Pt/SnS/SnS2Qds/WS2/FTO through SCAPS-1D simulations. SnS functions as the absorber layer due to its optimal band gap and high absorption coefficient, while SnS2 works as a buffer layer improving charge transport via quantum confinement. WS2 known for its high electron mobility, is employed as the electron transport layer. The results indicate that optimizing the thickness of each layer significantly improves efficiency. The influence of electron affinity, interface defects and contact work functions were examined leading to a well-tuned conduction band offset and minimized recombination losses that enhance performance of the proposed architecture achieving a PCE of 22.78% representing a substantial improvement over conventional SnS-based solar cells. This simulation study reveals the potential of chalcogenide based materials for high efficiency, cost effective, and environmentally friendly photovoltaics, offering a functional alternative to toxic and rare element based solar cells.