Quadruple Metal Gate Work Function Engineering to Enhance Sensitivity of Junctionless Cylindrical Gate All Around In0.53Ga0.47As Nanowire MOSFET Based Biosensor for Neutral Biomolecule Species Detection for the Upcoming Sub 14 nm Technology Node
摘要
This work presents a biosensor based on a junctionless cylindrical gate all around (CGAA) In0.53Ga0.47As nanowire MOSFET that uses the Dielectric Modulation (DM) technique and quadruple metal (QM) gate engineering to detect neutral biomolecules species such as uricase, streptavidin, protein, biotin, choline oxidase, and APTES, among others, electrically and without labels. A nanogap cavity region is created in the JL In0.53Ga0.47As NW MOSFET for biomolecule immobilization by etching the gate oxide layer above the Al2O3 interfacial layer. The sensing parameters for biomolecule detection in a dry environment have been the change in the drain current (ID), threshold voltage (VTH), off-current sensitivity (SIoff), threshold voltage sensitivity (SVth), ION/IOFF current ratio, and subthreshold slope (SS) of the device. The current study adds a novel, previously unrecognized biomolecule sensing metric—SS—to the existing literature. In contrast to the results found in previous research, the sensitivity metrics for JL In0.53Ga0.47As NW, such as a smaller DIBL (56.39 mV/V), a smaller SIoff (2.64 × 10-3), a higher SVth (10), a nearly perfect subthreshold slope (SS) (60 mV/dec), and a higher ION/IOFF current ratio (6.83 × 108), have been acquired in this work.