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<p>Present work investigates the DC and Analog/RF characteristics such as the drain current (I<sub>D</sub>), Transconductance (g<sub>m</sub>), Transconductance Generation Factor (TGF), Cut-off frequency (f<sub>T</sub>) Frequency Transconductance Product (FTP), Transit time (τ), and the total resistance of the source region, drain region, and channel resistance (R<sub>SD+CH</sub>) for Triple Metal (TM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Germanium nanowire (GeNW) MOSFETs with 3&#xa0;nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green Function’s (NEGF) approach along with the self-consistent solution of Schrödinger’s equation and Poisson’s equation has been considered. The channel is taken to be lightly doped in the case of IM TM CGAA GeNW type of device. The effect of TM Gate work function engineering for GeNW channel of diameter 3&#xa0;nm with gate oxide Al<sub>2</sub>O<sub>3</sub> the thickness of 0.8&#xa0;nm on I<sub>D</sub>, g<sub>m</sub>, TGF, f<sub>T</sub>, τ, FTP and R<sub>SD+CH</sub> has been studied. Moreover, a comparative study has been made between IMTM and JLTM CGAA GeNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) I<sub>ON</sub> current and (ii) threshold voltage (V<sub>TH</sub>) as the IM device. About 9.63 times and 8.89 times reduction in I<sub>OFF</sub> is seen for the same I<sub>ON</sub> and same V<sub>TH</sub> devices respectively as compared to IM device. It has been found that TM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL GeNW showed much lower DIBL ~ 39.38&#xa0;mV/V, a near ideal SS ~ 60&#xa0;mV/dec, and higher I<sub>ON</sub>/I<sub>OFF</sub> current ratio ~ 4.71 × 10<sup>11</sup> which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL GeNW device performs better than IM in terms of SS, DIBL, I<sub>ON</sub>/I<sub>OFF</sub>, g<sub>m</sub>, TGF, f<sub>T</sub>, τ, FTP and R<sub>SD+CH</sub>.</p>

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Triple Metal Gate Work Function Engineering to Enhance the Performance of Junctionless Cylindrical GAA Ge Nanowire MOSFET with High-κ Dielectric for the Upcoming Sub 3 nm Technology Node

  • 期刊论文

  • 发表日期：

    2026年7月27日

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  • Sanjay,
  • Vibhor Kumar,
  • Anil Vohra

摘要

Present work investigates the DC and Analog/RF characteristics such as the drain current (ID), Transconductance (gm), Transconductance Generation Factor (TGF), Cut-off frequency (fT) Frequency Transconductance Product (FTP), Transit time (τ), and the total resistance of the source region, drain region, and channel resistance (RSD+CH) for Triple Metal (TM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Germanium nanowire (GeNW) MOSFETs with 3 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green Function’s (NEGF) approach along with the self-consistent solution of Schrödinger’s equation and Poisson’s equation has been considered. The channel is taken to be lightly doped in the case of IM TM CGAA GeNW type of device. The effect of TM Gate work function engineering for GeNW channel of diameter 3 nm with gate oxide Al2O3 the thickness of 0.8 nm on ID, gm, TGF, fT, τ, FTP and RSD+CH has been studied. Moreover, a comparative study has been made between IMTM and JLTM CGAA GeNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) ION current and (ii) threshold voltage (VTH) as the IM device. About 9.63 times and 8.89 times reduction in IOFF is seen for the same ION and same VTH devices respectively as compared to IM device. It has been found that TM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL GeNW showed much lower DIBL ~ 39.38 mV/V, a near ideal SS ~ 60 mV/dec, and higher ION/IOFF current ratio ~ 4.71 × 1011 which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL GeNW device performs better than IM in terms of SS, DIBL, ION/IOFF, gm, TGF, fT, τ, FTP and RSD+CH.