<p>Diamond wire sawing introduces saw marks and an amorphous silicon layer on the surface of monocrystalline silicon wafers, which hinders uniform alkaline texturing and causes saw‑mark inheritance on the textured surface, thereby reducing light‑trapping efficiency and consequently impairing the power conversion efficiency of solar cells. Herein, we report a dopant‑driven surface activation strategy to break saw‑mark inheritance and achieve uniform texturing. Through a simple thermal diffusion process using boric acid as the dopant source, homogeneous incorporation of boron atoms is realized, inducing lattice contraction and electron density redistribution, which significantly enhances the surface reactivity of silicon wafers during alkaline etching, resulting in a more uniform pyramid texture. Experimental results show that after boron doping treatment, the weighted average reflectance of the wafer surface decreases from 11.18% to 10.13%, an absolute reduction of 1.05%. Meanwhile, the boron‑doped silicon wafers achieve a photovoltaic conversion efficiency of 26.31%, which is 0.18 percentage points higher than that of the undoped reference group (26.13%). This work demonstrates that breaking saw‑mark inheritance via dopant‑driven surface activation provides a practical and scalable route to high‑quality alkaline texturing of diamond wire‑sawn monocrystalline silicon wafers, contributing to the development of high‑efficiency photovoltaic devices.</p>