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<p>This study investigates the influence of excitation distance on the lateral photovoltaic effect (LPE) in hybrid amorphous/crystalline silicon (a-Si:H/c-Si) p–i–n structures under laser illumination across visible to infrared wavelengths. By systematically varying the contact distance and laser power, we demonstrate that the position sensitivity exhibits distinct behaviors in low and high power regimes. At low power (&lt; 10 mW), sensitivity remains nearly constant regardless of contact distance, attributed to minimal carrier collision probability. In contrast, at higher powers, sensitivity increases with decreasing contact distance due to enhanced carrier diffusion and reduced recombination losses. Furthermore, sensitivity improves with increasing wavelength, with infrared excitation (980&#xa0;nm) yielding the highest response due to deeper photon penetration and reduced recombination in the amorphous layer. A theoretical model incorporating quantum efficiency, carrier diffusion length, and collision probability is proposed to explain the observed phenomena. These findings provide critical insights for optimizing large-area position-sensitive detectors (PSDs) based on a-Si:H/c-Si heterostructures, paving the way for advanced optoelectronic applications.</p>

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Impact of Excitation Distance on the Lateral Photovoltaic Response in Amorphous–Crystalline Silicon Hybrid Devices

  • 期刊论文

  • 发表日期：

    2026年7月2日

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  • Soni Prayogi,
  • Muhammad A.

摘要

This study investigates the influence of excitation distance on the lateral photovoltaic effect (LPE) in hybrid amorphous/crystalline silicon (a-Si:H/c-Si) p–i–n structures under laser illumination across visible to infrared wavelengths. By systematically varying the contact distance and laser power, we demonstrate that the position sensitivity exhibits distinct behaviors in low and high power regimes. At low power (< 10 mW), sensitivity remains nearly constant regardless of contact distance, attributed to minimal carrier collision probability. In contrast, at higher powers, sensitivity increases with decreasing contact distance due to enhanced carrier diffusion and reduced recombination losses. Furthermore, sensitivity improves with increasing wavelength, with infrared excitation (980 nm) yielding the highest response due to deeper photon penetration and reduced recombination in the amorphous layer. A theoretical model incorporating quantum efficiency, carrier diffusion length, and collision probability is proposed to explain the observed phenomena. These findings provide critical insights for optimizing large-area position-sensitive detectors (PSDs) based on a-Si:H/c-Si heterostructures, paving the way for advanced optoelectronic applications.