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<p>This work presents a dual material gate (DMG) SiGe/Si interface nanowire field effect transistor designed for temperature sensing applications. The impact of temperature change on electrical performance metrics, such as drain current, on-state current, I<sub>ON</sub>/I<sub>OFF</sub> ratio, and on-state resistance R<sub>ON</sub>, has been studied. To address and reduce severe problems such as temperature stability, power consumption, and leakage current, the SiGe/Si Nanowire FET is introduced. A temperature-based drain current and resistance-based model is also developed for the proposed device. The linearity parameters, such as gm1, gm2, gm3, VIP2, VIP3, IIP3, and IDM3, served as FOMs for enhanced performance across different temperatures.</p>

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Exploring the Linearity Parameters for Dual Material Gate SiGe/Si Nanowire FET as a Temperature Sensor

  • 期刊论文

  • 发表日期：

    2026年2月7日

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  • Pawandeep Kaur,
  • Michael Cholines Pedapudi,
  • Anchal Thakur,
  • Prashant Mani,
  • Mohammad Shuaib Khan,
  • Girish Wadhwa

摘要

This work presents a dual material gate (DMG) SiGe/Si interface nanowire field effect transistor designed for temperature sensing applications. The impact of temperature change on electrical performance metrics, such as drain current, on-state current, ION/IOFF ratio, and on-state resistance RON, has been studied. To address and reduce severe problems such as temperature stability, power consumption, and leakage current, the SiGe/Si Nanowire FET is introduced. A temperature-based drain current and resistance-based model is also developed for the proposed device. The linearity parameters, such as gm1, gm2, gm3, VIP2, VIP3, IIP3, and IDM3, served as FOMs for enhanced performance across different temperatures.