Scholarlink

<p>Group IV materials are considered to be highly efficient materials for the construction of heterojunction bipolar phototransistors (HPT). They possess the quality of high absorption, low noise, high quantum efficiency, and high responsivity. In today’s scenario, there is a huge demand for advanced photonic devices to enhance system performance. In this work application of an advanced photodetector using group IV materials is utilised in a 96-channel dense hybrid passive optical network (PON) system. A device structure with n-p<sup>+</sup>-n<sup>−</sup>-n configuration is used in HPT. Phototransistor utilizes the Ge<sub>1-ϰ</sub>Sn<sub>ϰ</sub> on Silicon (Si) substrate via Germanium (Ge) virtual substrate to avoid defects due to lattice-mismatch imperfections. This HPT shows good performance in terms of absorption coefficient, responsivity, quantum efficiency, and signal-to-noise ratio (SNR). With the insertion of Sn material into the Ge<sub>1-ϰ</sub>Sn<sub>ϰ</sub> alloy, the bandgap energy decreases, and the detection wavelength is shifted toward a longer wavelength, about 1550&#xa0;nm. Optical signal is transmitted with a power level of 1&#xa0;μm. System is analysed for different concentrations of Sn material with different base doping materials. Results showed that the working efficiency of a photodetector is highly dependent on the type and concentration of material used in its fabrication. Performance of the proposed system is measured for Sn concentration (ϰ) = 8% and 13% with variable base doping: N<sub>ab</sub> = 5 × 10<sup>19</sup> and N<sub>ab</sub> = 5 × 10<sup>17</sup> in terms of eye diagrams, quality factor (Q-factor), BER, and jitter. A high quality factor of value 21.57 and low BER of value 4.64 × 10<sup>–32</sup> are achieved by taking ϰ = 13% and N<sub>ab</sub> = 5 × 10<sup>19</sup>.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High Performance Ge1-ϰSnϰ/Ge Heterojunction Bipolar Phototransistor on Si Substrate Used in Dense Hybrid Passive Optical Network (PON) System to Enhance Its Capability

  • 期刊论文

  • 发表日期：

    2026年2月12日

查看全文
  • Neha,
  • Chakresh Kumar,
  • Ghanendra Kumar

摘要

Group IV materials are considered to be highly efficient materials for the construction of heterojunction bipolar phototransistors (HPT). They possess the quality of high absorption, low noise, high quantum efficiency, and high responsivity. In today’s scenario, there is a huge demand for advanced photonic devices to enhance system performance. In this work application of an advanced photodetector using group IV materials is utilised in a 96-channel dense hybrid passive optical network (PON) system. A device structure with n-p+-n−-n configuration is used in HPT. Phototransistor utilizes the Ge1-ϰSnϰ on Silicon (Si) substrate via Germanium (Ge) virtual substrate to avoid defects due to lattice-mismatch imperfections. This HPT shows good performance in terms of absorption coefficient, responsivity, quantum efficiency, and signal-to-noise ratio (SNR). With the insertion of Sn material into the Ge1-ϰSnϰ alloy, the bandgap energy decreases, and the detection wavelength is shifted toward a longer wavelength, about 1550 nm. Optical signal is transmitted with a power level of 1 μm. System is analysed for different concentrations of Sn material with different base doping materials. Results showed that the working efficiency of a photodetector is highly dependent on the type and concentration of material used in its fabrication. Performance of the proposed system is measured for Sn concentration (ϰ) = 8% and 13% with variable base doping: Nab = 5 × 1019 and Nab = 5 × 1017 in terms of eye diagrams, quality factor (Q-factor), BER, and jitter. A high quality factor of value 21.57 and low BER of value 4.64 × 10–32 are achieved by taking ϰ = 13% and Nab = 5 × 1019.