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<p>A Vertical Cylindrical Gate-All-Around (VCGAA) Tunnel Field-Effect Transistor (TFET) is proposed in this work for dielectric modulation-based biosensor. The device features a vertically aligned nanowire structure with a gate electrode wrapped around the channel, offering superior electrostatic control and improved gate coupling. A biomolecule sensing cavity is embedded at the source-side gate region, enabling direct interaction with target biomolecules. To enhance performance, gate-source overlap, and gate-drain underlap engineering are employed. Sentaurus TCAD simulations demonstrate that an optimized overlap/underlap length of 15&#xa0;nm significantly improves device characteristics, yielding an ON current of 9.27 × 10⁻<sup>4</sup> A/µm, OFF current of 2.81 × 10⁻<sup>15</sup> A/µm, and a threshold voltage of 0.162&#xa0;V. The response of the sensor to various neutral biomolecules streptavidin, glucose oxidase, bacteriophage T7, keratin, staphylococcal nuclease, and gelatin—shows that increasing the dielectric constant of the cavity enhances band-to-band tunneling, electric field intensity, and ON current, while reducing threshold voltage. A maximum ON current sensitivity (SION) of 10,485 is achieved for gelatin (k = 12) which significantly higher to the previously reported TFET-based biosensors for silicon based sensors. The proposed VCGAA-TFET demonstrates great potential as a compact, low-power, and scalable biosensing platform for real-time detection of biomolecules in biomedical applications.</p>

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Investigation of Vertical Cylindrical Gate-All-Around TFET for Low Power Dielectric Modulation-Based Biosensor

  • 期刊论文

  • 发表日期：

    2026年1月12日

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  • Abhishek Kumar

摘要

A Vertical Cylindrical Gate-All-Around (VCGAA) Tunnel Field-Effect Transistor (TFET) is proposed in this work for dielectric modulation-based biosensor. The device features a vertically aligned nanowire structure with a gate electrode wrapped around the channel, offering superior electrostatic control and improved gate coupling. A biomolecule sensing cavity is embedded at the source-side gate region, enabling direct interaction with target biomolecules. To enhance performance, gate-source overlap, and gate-drain underlap engineering are employed. Sentaurus TCAD simulations demonstrate that an optimized overlap/underlap length of 15 nm significantly improves device characteristics, yielding an ON current of 9.27 × 10⁻4 A/µm, OFF current of 2.81 × 10⁻15 A/µm, and a threshold voltage of 0.162 V. The response of the sensor to various neutral biomolecules streptavidin, glucose oxidase, bacteriophage T7, keratin, staphylococcal nuclease, and gelatin—shows that increasing the dielectric constant of the cavity enhances band-to-band tunneling, electric field intensity, and ON current, while reducing threshold voltage. A maximum ON current sensitivity (SION) of 10,485 is achieved for gelatin (k = 12) which significantly higher to the previously reported TFET-based biosensors for silicon based sensors. The proposed VCGAA-TFET demonstrates great potential as a compact, low-power, and scalable biosensing platform for real-time detection of biomolecules in biomedical applications.