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<p>This paper investigates the impact of interface trap charges (ITCs) and temperature variations on the performance of the Extended Source FinFET-based Tunnel FET (ES Fin-TFET), leveraging both point and line tunneling. The study analyzes the device’s DC and analog/RF behavior in the presence of both acceptor and donor ITCs at the channel/gate dielectric (HfO<sub>2</sub>) interface. The ES Fin-TFET exhibits stability up to an ITC density of 1 × 10<sup>12</sup> /cm2, but performance degrades at higher ITC densities. For instance, with a donor ITC density of 1 × 10<sup>13</sup> /cm2, the off-state current (I<sub>OFF</sub>) of ES Fin-TFET degrades by six orders of magnitude, i.e., increasing from approximately 10<sup>–17</sup> A to 10<sup>–11</sup> A. In addition, the ES Fin-TFETs’ sub-threshold performance also degrades at elevated temperatures due to the increased influence of Shockley–Read–Hall recombination processes. Notably, the device is immune to temperature variations up to 350&#xa0;K, maintaining excellent performance within 250&#xa0;K to 350&#xa0;K range. However, beyond 350&#xa0;K, performance degrades, with the I<sub>ON</sub>/I<sub>OFF</sub> ratio decreasing substantially from ~ 10<sup>14</sup> at 250&#xa0;K to 10<sup>7</sup> at 450&#xa0;K. Furthermore, this study also analyzes the low-frequency flicker noise characteristics of the ES Fin-TFET, providing insights into the impact of trap charges on noise performance. Therefore, this study provides a comprehensive insight into the reliability and performance limitations of the ES Fin-TFET for next-generation low-power and high-frequency applications.</p>

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Physical Insights into the Reliability of ES Fin-TFETs: An Analysis of Interface Traps, Noise, and Temperature-Induced Effects

  • 期刊论文

  • 发表日期：

    2026年1月8日

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  • B. V. Rao,
  • Parasa Sivadurgarao,
  • Arun Kumar,
  • Brinda Bhowmick

摘要

This paper investigates the impact of interface trap charges (ITCs) and temperature variations on the performance of the Extended Source FinFET-based Tunnel FET (ES Fin-TFET), leveraging both point and line tunneling. The study analyzes the device’s DC and analog/RF behavior in the presence of both acceptor and donor ITCs at the channel/gate dielectric (HfO2) interface. The ES Fin-TFET exhibits stability up to an ITC density of 1 × 1012 /cm2, but performance degrades at higher ITC densities. For instance, with a donor ITC density of 1 × 1013 /cm2, the off-state current (IOFF) of ES Fin-TFET degrades by six orders of magnitude, i.e., increasing from approximately 10–17 A to 10–11 A. In addition, the ES Fin-TFETs’ sub-threshold performance also degrades at elevated temperatures due to the increased influence of Shockley–Read–Hall recombination processes. Notably, the device is immune to temperature variations up to 350 K, maintaining excellent performance within 250 K to 350 K range. However, beyond 350 K, performance degrades, with the ION/IOFF ratio decreasing substantially from ~ 1014 at 250 K to 107 at 450 K. Furthermore, this study also analyzes the low-frequency flicker noise characteristics of the ES Fin-TFET, providing insights into the impact of trap charges on noise performance. Therefore, this study provides a comprehensive insight into the reliability and performance limitations of the ES Fin-TFET for next-generation low-power and high-frequency applications.