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<p>In this paper, the mechanism of CaSi<sub>2</sub> formation under electron beam irradiation during epitaxial growth of CaF<sub>2</sub> on Si(111) substrate was discussed. The main factors controlling the efficiency of CaSi<sub>2</sub> synthesis have been identified. This is the decomposition of the CaF<sub>2</sub> molecule with the formation of Ca and F ions and the diffusion of silicon atoms from the substrate. Assuming that the rate-limiting process for thin films is the decomposition of the CaF<sub>2</sub> molecule, we estimate the rate of production of calcium ions by electron irradiation at standard parameters of electron beam (an accelerating voltage of 20&#xa0;keV and a current density of ≈ 0.125&#xa0;mA/cm<sup>2</sup>) used in high-energy electron diffraction (RHEED) unit of our growth equipment. Results of estimation are compared with experimental data on the amount of synthesized CaSi<sub>2</sub>, obtained from atomic force microscopy, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The close agreement between the experimental and estimated values confirms that CaF₂ decomposition is the primary factor controlling the CaSi<sub>2</sub> synthesis efficiency.</p>

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Mechanism of CaSi2 Synthesis Under the Electron-Beam Irradiation During Molecular-Beam Epitaxy of CaF2 on Si(111)

  • 期刊论文

  • 发表日期：

    2026年1月9日

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  • Yuhan Wang,
  • Aleksey V. Kacyuba,
  • Gennadiy N. Kamaev,
  • Aigul F. Zinovieva,
  • Vladimir A. Zinovyev,
  • Anatoly V. Dvurechenskii

摘要

In this paper, the mechanism of CaSi2 formation under electron beam irradiation during epitaxial growth of CaF2 on Si(111) substrate was discussed. The main factors controlling the efficiency of CaSi2 synthesis have been identified. This is the decomposition of the CaF2 molecule with the formation of Ca and F ions and the diffusion of silicon atoms from the substrate. Assuming that the rate-limiting process for thin films is the decomposition of the CaF2 molecule, we estimate the rate of production of calcium ions by electron irradiation at standard parameters of electron beam (an accelerating voltage of 20 keV and a current density of ≈ 0.125 mA/cm2) used in high-energy electron diffraction (RHEED) unit of our growth equipment. Results of estimation are compared with experimental data on the amount of synthesized CaSi2, obtained from atomic force microscopy, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The close agreement between the experimental and estimated values confirms that CaF₂ decomposition is the primary factor controlling the CaSi2 synthesis efficiency.