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<p>This work presents a comprehensive investigation of GaN-based Junctionless Drain Extended Longitudinal FinFET (DELFinFET) using Sentaurus TCAD simulations, targeting thermally robust and energy efficient semiconductor devices as a means to reduce the environmental footprint of electronic devices. Introducing a longitudinal fin achieves superior lateral electric field modulation, improved carrier transport, and enhanced electric control. This helps in improving the key analog performance metrics such as sub-threshold slope, leakage current (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(I_{off}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>I</mi> <mrow> <mi mathvariant="italic">off</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>), transconductance (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(g_m\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>g</mi> <mi>m</mi> </msub> </math></EquationSource> </InlineEquation>), and the switching ratio (<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(I_{on}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>I</mi> <mrow> <mi mathvariant="italic">on</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>/<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(I_{off}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>I</mi> <mrow> <mi mathvariant="italic">off</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>). The results obtained highlight the potential of DELFinFET for low-power applications. A comparative evaluation is performed between the designed device and other device configurations to verify the effectiveness of the design.</p>

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Investigation of Performance Improvement in Drain Extended Longitudinal FinFETs for Thermal-aware Sustainable Electronics Applications

  • 期刊论文

  • 发表日期：

    2025年12月6日

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  • Ashwini Nanjunda,
  • KrishnanNadar Savithry Nikhil

摘要

This work presents a comprehensive investigation of GaN-based Junctionless Drain Extended Longitudinal FinFET (DELFinFET) using Sentaurus TCAD simulations, targeting thermally robust and energy efficient semiconductor devices as a means to reduce the environmental footprint of electronic devices. Introducing a longitudinal fin achieves superior lateral electric field modulation, improved carrier transport, and enhanced electric control. This helps in improving the key analog performance metrics such as sub-threshold slope, leakage current ( \(I_{off}\) I off ), transconductance ( \(g_m\) g m ), and the switching ratio ( \(I_{on}\) I on / \(I_{off}\) I off ). The results obtained highlight the potential of DELFinFET for low-power applications. A comparative evaluation is performed between the designed device and other device configurations to verify the effectiveness of the design.