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<p>This paper investigates the influence of silicon dopant concentration on the performance of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). AlGaN-based DUV-LEDs are critical for applications like sterilization and water purification but face efficiency challenges due to carrier imbalance and material defects. The study focuses on optimizing the hole-blocking layer (HBL) doped with silicon (Si), as HBL design significantly impacts carrier mobility, carrier confinement, and radiative recombination. Using MATLAB's one-dimensional drift–diffusion charge control (1D-DDCC) software, the research examines dopant concentrations ranging from 1 × 10<sup>15</sup>&#xa0;cm⁻<sup>3</sup> to 1 × 10<sup>20</sup>&#xa0;cm⁻<sup>3</sup> in six different devices with three quantum wells. Simulations will analyse carrier density, current density, energy band diagrams, radiative recombination rate, electric field,&#xa0;current-voltage (IV) characteristic, quantum efficiencies, and luminescence to determine the optimal doping level that minimizes defects while maximizing efficiency. Expected outcomes include identifying a doping range that balances recombination rate and quantum efficiency, leading to enhanced DUV-LED efficiency and stability. These findings aim to advance sustainable ultraviolet technologies and set a benchmark for future semiconductor designs.</p>

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Numerical Modelling of Heavily Silicon-Doped Hole Blocking Heterostructures for Enhanced Performance of AlGaN-Based DUV-LEDs

  • 期刊论文

  • 发表日期：

    2025年12月10日

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  • Farid Munawwar Amir Fadhil,
  • Mohammad Amirul Hairol Aman,
  • Ahmad Fakhrurrazi Ahmad Noorden,
  • Wan Hazman Danial,
  • Suzairi Daud,
  • Mahdi Bahadoran,
  • Muhammad Luqman Mohd Napi

摘要

This paper investigates the influence of silicon dopant concentration on the performance of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). AlGaN-based DUV-LEDs are critical for applications like sterilization and water purification but face efficiency challenges due to carrier imbalance and material defects. The study focuses on optimizing the hole-blocking layer (HBL) doped with silicon (Si), as HBL design significantly impacts carrier mobility, carrier confinement, and radiative recombination. Using MATLAB's one-dimensional drift–diffusion charge control (1D-DDCC) software, the research examines dopant concentrations ranging from 1 × 1015 cm⁻3 to 1 × 1020 cm⁻3 in six different devices with three quantum wells. Simulations will analyse carrier density, current density, energy band diagrams, radiative recombination rate, electric field, current-voltage (IV) characteristic, quantum efficiencies, and luminescence to determine the optimal doping level that minimizes defects while maximizing efficiency. Expected outcomes include identifying a doping range that balances recombination rate and quantum efficiency, leading to enhanced DUV-LED efficiency and stability. These findings aim to advance sustainable ultraviolet technologies and set a benchmark for future semiconductor designs.