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<p>The LIGBT is a type of Insulated Gate Bipolar Transistor (IGBT) featuring a lateral structure, which enables easy integration. A reverse conducting LIGBT device with an integrated self-biased punch-through NPN transistor is proposed(NPN-LIGBT). The proposed LIGBT integrates a punch-through NPN transistor in the N-buffer region of the anode on the basis of a conventional LIGBT device. The key point is that the width of the P-Base of the NPN transistor is narrower and the doping concentration is lower, so when a positive voltage is applied to the anode, the depletion region will be extended to the P-Base and penetration occurs, and at this time, the NPN transistor provides a carrier channel to extract electrons from the drift region, which reduces the forward saturation current of the device and can function in both reverse conduction and turn-off states as well as enable the device to operate in forward conduction without the snapback effect. At the same on-state voltage drop of V<sub>on</sub> = 1.7 V, compared with traditional LIGBTs and SSA LIGBTs, the turn-off loss E<sub>off</sub> of the NPN-LIGBT is reduced by 37% and 8%, respectively.</p>

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A Novel Reverse Conducting SOI-LIGBT with Integrated Self-Biased Through-type Transistor

  • 期刊论文

  • 发表日期：

    2025年12月9日

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  • Weizhong Chen,
  • Minghao Liang,
  • Huimin Tan,
  • Haishi Wang,
  • Bingfu Mu,
  • Wenliang Shen

摘要

The LIGBT is a type of Insulated Gate Bipolar Transistor (IGBT) featuring a lateral structure, which enables easy integration. A reverse conducting LIGBT device with an integrated self-biased punch-through NPN transistor is proposed(NPN-LIGBT). The proposed LIGBT integrates a punch-through NPN transistor in the N-buffer region of the anode on the basis of a conventional LIGBT device. The key point is that the width of the P-Base of the NPN transistor is narrower and the doping concentration is lower, so when a positive voltage is applied to the anode, the depletion region will be extended to the P-Base and penetration occurs, and at this time, the NPN transistor provides a carrier channel to extract electrons from the drift region, which reduces the forward saturation current of the device and can function in both reverse conduction and turn-off states as well as enable the device to operate in forward conduction without the snapback effect. At the same on-state voltage drop of Von = 1.7 V, compared with traditional LIGBTs and SSA LIGBTs, the turn-off loss Eoff of the NPN-LIGBT is reduced by 37% and 8%, respectively.