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<p>This work investigates the synthesis, characterization, and device integration of CoAl₀.₂Fe₁.₈O₄ thin films fabricated via the sol–gel auto-combustion method. Structural analysis using X-ray diffraction confirms the formation of a cubic spinel phase with successful incorporation of Al<sup>3</sup>⁺ ions, preserving crystallographic integrity while inducing slight modifications in lattice parameters. Morphological studies using SEM and TEM reveal quasi-spherical nanoparticles with mean sizes ranging between 25–40 nm, exhibiting controlled agglomeration favorable for electromagnetic applications. UV–Vis-NIR spectroscopic measurements highlight strong absorbance in the UV–visible region and high diffuse reflectance in the near-infrared, with optical band gaps estimated at 1.98 eV (direct) and 2.59 eV (indirect), supporting potential for optoelectronic uses. Current–voltage (I-V) characterization of Ag/CoAl₀.₂Fe₁.₈O₄/p-Si/Al heterojunctions reveals excellent rectifying behavior with temperature-dependent diode parameters and barrier heights, modeled via thermionic emission and Norde's methods. Findings demonstrate that Al-substituted CoFe₂O₄ thin films possess tunable structural and electronic features, making them promising candidates for optoelectronics applications.</p>

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CoAl₀.₂Fe₁.₈O₄ Thin Films: Synthesis, Structural, Morphological, Optical properties, and Charge Transport Characteristics in CoAl₀.₂Fe₁.₈O₄/p-Si Heterojunctions

  • 期刊论文

  • 发表日期：

    2025年11月3日

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  • M. K. Seddeek,
  • A. M. A. Shamekh

摘要

This work investigates the synthesis, characterization, and device integration of CoAl₀.₂Fe₁.₈O₄ thin films fabricated via the sol–gel auto-combustion method. Structural analysis using X-ray diffraction confirms the formation of a cubic spinel phase with successful incorporation of Al3⁺ ions, preserving crystallographic integrity while inducing slight modifications in lattice parameters. Morphological studies using SEM and TEM reveal quasi-spherical nanoparticles with mean sizes ranging between 25–40 nm, exhibiting controlled agglomeration favorable for electromagnetic applications. UV–Vis-NIR spectroscopic measurements highlight strong absorbance in the UV–visible region and high diffuse reflectance in the near-infrared, with optical band gaps estimated at 1.98 eV (direct) and 2.59 eV (indirect), supporting potential for optoelectronic uses. Current–voltage (I-V) characterization of Ag/CoAl₀.₂Fe₁.₈O₄/p-Si/Al heterojunctions reveals excellent rectifying behavior with temperature-dependent diode parameters and barrier heights, modeled via thermionic emission and Norde's methods. Findings demonstrate that Al-substituted CoFe₂O₄ thin films possess tunable structural and electronic features, making them promising candidates for optoelectronics applications.