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<p>The nanowire gate-all-around structure with the highest channel electrostatic integrity shows the best resistance to short channel effects and improved scaling compared to other multi-gate systems and capacity. We present a multistructure study of the impact of a gate-all-around nanowire tunnelling field on a transistor to enhance the drain current. This work describes ferroelectric nanowire tunnel field-effect transistors operating at V<sub>DS</sub> = 0.5&#xa0;V, well below the 20&#xa0;mV/decade switching characteristics. Compared to traditional Nanowire tunnel field effect transistors, the suggested device performs better with a high I<sub>ON</sub>-I<sub>OFF</sub> ratio, lower subthreshold swing, and enhanced driving current. The proposed devices have a 1000 times better I<sub>ON</sub>-I<sub>OFF</sub> ratio than conventional NWTFET. The suggested devices are examined, including conductance, potential, energy band diagram, transfer and output properties, and other aspects for analog applications.</p>

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Performance Improvement of Nanowire TFET by Using Different Ferroelectric Semiconductor Structures

  • 期刊论文

  • 发表日期：

    2025年11月26日

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  • Avinash Kumar,
  • Balwinder Raj

摘要

The nanowire gate-all-around structure with the highest channel electrostatic integrity shows the best resistance to short channel effects and improved scaling compared to other multi-gate systems and capacity. We present a multistructure study of the impact of a gate-all-around nanowire tunnelling field on a transistor to enhance the drain current. This work describes ferroelectric nanowire tunnel field-effect transistors operating at VDS = 0.5 V, well below the 20 mV/decade switching characteristics. Compared to traditional Nanowire tunnel field effect transistors, the suggested device performs better with a high ION-IOFF ratio, lower subthreshold swing, and enhanced driving current. The proposed devices have a 1000 times better ION-IOFF ratio than conventional NWTFET. The suggested devices are examined, including conductance, potential, energy band diagram, transfer and output properties, and other aspects for analog applications.