Scholarlink

<p>Current research endeavor features the performance analysis of Stacked Oxide Triple Material Cylindrical Surrounding Gate Junctionless Tubular Channel MOSFET with emphasis on device response towards elevated temperatures and dimension miniaturization; 2D Poisson’s equation, considering the Young’s Parabolic Potential Approximation, has been solved to&#xa0;extract the expression of inner potential, which has been utilized to deduce the expression of threshold voltage; crucial device characteristics have been presented at heightened temperatures with comparative studies of those at 300 K temperature; illustrations of threshold voltage, subthreshold swing, drain current and associated parameters have been exhibited to highlight the improved performance of the proposed device which is further fortified by the evidences of comparative investigation with it’s Full-Channel Junctionless Equivalent. Benefits of stacked oxide system of HfO2/SiO2 in the proposed device have also been explored with relative analysis with other stacked oxide systems; Threshold voltage analysis and simulation confirms excellent corroboration and further strengthens the associated simulative investigation conducted in this research. The research study conducted exhibits the superior performance of the proposed device for its implementation in advanced applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Performance Investigation of Elevated Temperature Impacts on Stacked Oxide Triple Material Cylindrical Surrounding Gate Junctionless Tubular Channel MOSFET

  • 期刊论文

  • 发表日期：

    2025年12月15日

查看全文
  • Pritha Banerjee,
  • Jayoti Das

摘要

Current research endeavor features the performance analysis of Stacked Oxide Triple Material Cylindrical Surrounding Gate Junctionless Tubular Channel MOSFET with emphasis on device response towards elevated temperatures and dimension miniaturization; 2D Poisson’s equation, considering the Young’s Parabolic Potential Approximation, has been solved to extract the expression of inner potential, which has been utilized to deduce the expression of threshold voltage; crucial device characteristics have been presented at heightened temperatures with comparative studies of those at 300 K temperature; illustrations of threshold voltage, subthreshold swing, drain current and associated parameters have been exhibited to highlight the improved performance of the proposed device which is further fortified by the evidences of comparative investigation with it’s Full-Channel Junctionless Equivalent. Benefits of stacked oxide system of HfO2/SiO2 in the proposed device have also been explored with relative analysis with other stacked oxide systems; Threshold voltage analysis and simulation confirms excellent corroboration and further strengthens the associated simulative investigation conducted in this research. The research study conducted exhibits the superior performance of the proposed device for its implementation in advanced applications.