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<p>This study explores the DC and optical performance analysis of Si<sub>1-x</sub>Ge<sub>x</sub> pocket-based vertical TFETs across various light wavelengths of spectrum. Initially D.C parameters and electrostatic potential plot are analyzed to investigate the device's switching and electrical characteristics. Furthermore, the device's potential for photonic applications is evaluated by calculating key optical parameters like sensitivity. A comparison table is incorporated to set benchmarks and highlight the importance of vertical TFETs. The device achieves a peak sensitivity of approximately 58 and a responsivity (R) of 0.88 A/W at a wavelength of 250&#xa0;nm. Additionally, the study examines the influence of light on tunneling and the recombination rate of the TFET-based photodetector by varying the pocket length (L<sub>P</sub>) and temperature (T).</p>

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Photo Sensing Analysis of SiGe Pocket Based Vertical TFET

  • 期刊论文

  • 发表日期：

    2025年11月11日

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  • Jai Kumar Bhatt,
  • Shreyas Tiwari,
  • Arun Kishor Johar,
  • Girdhar Gopal,
  • Tarun Varma

摘要

This study explores the DC and optical performance analysis of Si1-xGex pocket-based vertical TFETs across various light wavelengths of spectrum. Initially D.C parameters and electrostatic potential plot are analyzed to investigate the device's switching and electrical characteristics. Furthermore, the device's potential for photonic applications is evaluated by calculating key optical parameters like sensitivity. A comparison table is incorporated to set benchmarks and highlight the importance of vertical TFETs. The device achieves a peak sensitivity of approximately 58 and a responsivity (R) of 0.88 A/W at a wavelength of 250 nm. Additionally, the study examines the influence of light on tunneling and the recombination rate of the TFET-based photodetector by varying the pocket length (LP) and temperature (T).