<p>The manuscript conducts an extensive analysis of various spacer parameters on DC and analog characteristics of a novel Dopingless Nanosheet FET (DL-NSFET). The proposed study considers two types of spacers: single and dual spacers in symmetrical structure design. In a single spacer, Source/Drain side spacer are of the same kind of single-k dielectric material, and in a dual spacer, two vertically different-k spacer materials are used in the inner high-k configuration or in the inner low-k configuration. The effect of spacer materials having permittivity in the range of 1 to 22 and different spacer lengths in single and dual spacer configurations has been extensively studied in terms of analog and RF behavior. The high value of the drain current (2.39E-05 A), the high value of I_on/I_off ratio (2.39E + 09), lower SS (62.4&#xa0;mV/Dec), lower DIBL (23.01&#xa0;mV/V), higher g_m, lower g_ds, and higher gain is obtained with high-k (HfO₂) spacer making it suitable for analog and digital applications. The capacitance profile of the device is also increased with dielectric permittivity, resulting in low f_T and f_max. In dual spacer design, HfO₂ as inner spacer gives better analog behavior in terms of better I_off, I_on/I_off, SS and DIBL in comparison to SiO₂ as inner spacer material. Analog behavior of the device is improved with inner high-k spacer but RF behavior is better for inner low-k spacer.</p>