Scholarlink

<p>In this work, a novel triple-layer cap recessed gate Al<sub>0.20</sub>Ga<sub>0.80</sub>N/GaN HEMT on a 6H-SiC substrate in depletion-mode operation is proposed and investigated for radio frequency and low noise applications. An optimization framework focused on 100&#xa0;nm to 400&#xa0;nm gate lengths using the Silvaco TCAD. A triple-layer cap enhances 2DEG density and lowers on-resistance due to the increased conduction band bending. The recessed gate technique enhances threshold voltage, improves electrostatic control, and suppresses short-channel effects. The DC characteristics, such as drain current, transconductance, and threshold voltage, have been investigated for the proposed device. In addition, we have also investigated Radio Frequency parameters, specifically cutoff frequency and maximum frequency. Moreover, the noise parameters investigated for the proposed device include the minimum noise figure and noise resistance. An investigation of the noise parameters has been conducted over the frequency span of 10 to 110&#xa0;GHz, which covers the frequency range up to the W band as per the IEEE radio frequency standard. The proposed device exhibits improved RF and noise parameters in comparison with state-of-the-art devices. The device models are calibrated against experimental data to validate the simulation models. A process flow has also been proposed for the feasibility of device fabrication.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

A Novel D-Mode Triple-Layer Cap Recessed-Gate Al0.20Ga0.80N/GaN HEMT for Radio Frequency and Low Noise Applications

  • 期刊论文

  • 发表日期：

    2025年12月1日

查看全文
  • Amit Agarwal,
  • Sumit Kale

摘要

In this work, a novel triple-layer cap recessed gate Al0.20Ga0.80N/GaN HEMT on a 6H-SiC substrate in depletion-mode operation is proposed and investigated for radio frequency and low noise applications. An optimization framework focused on 100 nm to 400 nm gate lengths using the Silvaco TCAD. A triple-layer cap enhances 2DEG density and lowers on-resistance due to the increased conduction band bending. The recessed gate technique enhances threshold voltage, improves electrostatic control, and suppresses short-channel effects. The DC characteristics, such as drain current, transconductance, and threshold voltage, have been investigated for the proposed device. In addition, we have also investigated Radio Frequency parameters, specifically cutoff frequency and maximum frequency. Moreover, the noise parameters investigated for the proposed device include the minimum noise figure and noise resistance. An investigation of the noise parameters has been conducted over the frequency span of 10 to 110 GHz, which covers the frequency range up to the W band as per the IEEE radio frequency standard. The proposed device exhibits improved RF and noise parameters in comparison with state-of-the-art devices. The device models are calibrated against experimental data to validate the simulation models. A process flow has also been proposed for the feasibility of device fabrication.