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<p>The SOI MOSFET with an undoped channel offers significant advantages in low-temperature cryogenic electronic circuits compared to Si bulk transistors. These benefits encompass decreased variability, reduced impact of the dopant freeze-out effect, higher mobility, the ability to tune the threshold voltage, and quasi-ideal electrostatic control at cryogenic temperatures. Consequently, silicon-based SOI MOSFET devices have demonstrated considerable promise as a foundational platform for silicon-based spin qubits and quantum information technology. Recognizing the potential of SOI MOSFETs in cryogenic electronic circuits, this paper pioneers the first-time study of the cryogenic behavior of the ultra-scaled 30&#xa0;nm SOI MOSFET using a fully quantum Non-Equilibrium Green's Function (NEGF) simulation. Through this powerful NEGF simulation, various phenomena of the 30&#xa0;nm SOI MOSFET are investigated, including improvements in the I<sub>ON</sub>/I<sub>OFF</sub> ratio, improvements in subthreshold swing (SS) with decreasing temperature, and SS saturation at deep cryogenic temperatures. Additionally, the study delves into various profile variations such as electric field, potential, energy band profiles, transconductance (g<sub>m</sub>), and the transconductance-drain current ratio with different temperatures.</p>

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Cryogenic and Quantum Simulation of Short Channel 30 nm SOI MOSFET: An NEGF Quantum Simulation

  • 期刊论文

  • 发表日期：

    2025年11月4日

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  • Aadil Anam,
  • S. Intekhab Amin,
  • Dinesh Prasad

摘要

The SOI MOSFET with an undoped channel offers significant advantages in low-temperature cryogenic electronic circuits compared to Si bulk transistors. These benefits encompass decreased variability, reduced impact of the dopant freeze-out effect, higher mobility, the ability to tune the threshold voltage, and quasi-ideal electrostatic control at cryogenic temperatures. Consequently, silicon-based SOI MOSFET devices have demonstrated considerable promise as a foundational platform for silicon-based spin qubits and quantum information technology. Recognizing the potential of SOI MOSFETs in cryogenic electronic circuits, this paper pioneers the first-time study of the cryogenic behavior of the ultra-scaled 30 nm SOI MOSFET using a fully quantum Non-Equilibrium Green's Function (NEGF) simulation. Through this powerful NEGF simulation, various phenomena of the 30 nm SOI MOSFET are investigated, including improvements in the ION/IOFF ratio, improvements in subthreshold swing (SS) with decreasing temperature, and SS saturation at deep cryogenic temperatures. Additionally, the study delves into various profile variations such as electric field, potential, energy band profiles, transconductance (gm), and the transconductance-drain current ratio with different temperatures.