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<p>This work explores the synthesis of ZnO thin films through a straightforward co-precipitation method, with and without nickel (Ni) doping, followed by spin coating onto silicon (Si) substrates. The main objective is to investigate the effects of varying Ni doping concentrations on the structural, morphological, and opto-electronic characteristics of the resulting films. Analytical techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier-transform infrared spectroscopy (FTIR), and optical reflectance measurements were used. FTIR and reflectance measurements were performed to assess the surface passivation properties of both Ni-doped and undoped ZnO films. Ni doping led to improved crystallinity, increased grain size, and the formation of Zn–O–Ni and Si–Zn bonds, enhancing the interface quality. Significantly, the minority carrier lifetime increased from 2 μs (undoped) to 82 μs at 2 at.% Ni doping, at a carrier density of 10<sup>14</sup> cm⁻<sup>3</sup>. In parallel, the reflectance at 500 nm decreased from 31 to 5%, demonstrating the films’ effective antireflection behavior. These improvements underline the potential of Ni-doped ZnO as a dual-function passivation and antireflection layer for Si-based photovoltaic devices.</p>

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Opto-Electronic Properties Enhancement of Silicon Solar Cells by Nickel Doped ZnO Nanoparticles

  • 期刊论文

  • 发表日期：

    2025年10月23日

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  • Moez Salem,
  • Amel Haouas,
  • Abdullah Almohammedi,
  • Hajar Ghannam

摘要

This work explores the synthesis of ZnO thin films through a straightforward co-precipitation method, with and without nickel (Ni) doping, followed by spin coating onto silicon (Si) substrates. The main objective is to investigate the effects of varying Ni doping concentrations on the structural, morphological, and opto-electronic characteristics of the resulting films. Analytical techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier-transform infrared spectroscopy (FTIR), and optical reflectance measurements were used. FTIR and reflectance measurements were performed to assess the surface passivation properties of both Ni-doped and undoped ZnO films. Ni doping led to improved crystallinity, increased grain size, and the formation of Zn–O–Ni and Si–Zn bonds, enhancing the interface quality. Significantly, the minority carrier lifetime increased from 2 μs (undoped) to 82 μs at 2 at.% Ni doping, at a carrier density of 1014 cm⁻3. In parallel, the reflectance at 500 nm decreased from 31 to 5%, demonstrating the films’ effective antireflection behavior. These improvements underline the potential of Ni-doped ZnO as a dual-function passivation and antireflection layer for Si-based photovoltaic devices.