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<p>This paper presents a novel biosensor based on a dual-material double-gate GaAsSb/InGaAs heterojunction tunnel FET with a low-k dielectric layer on a silicon substrate. Calibrated TCAD simulations demonstrate that the proposed structure achieves enhanced sensitivity and power efficiency compared to conventional single-gate or high-k designs. Key findings show that the biosensor exhibits high sensing characteristic in response to biomolecular charge and dielectric constant, with tunable performance under different bias conditions. Specifically, at a drain voltage of 0.5 V, the proposed biosensor achieves a maximum current sensitivity of <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(1.56\times 10^{5}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>1.56</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>5</mn> </msup> </mrow> </math></EquationSource> </InlineEquation> when detecting neutral biomolecule with a relative dielectric constant of 5, and a maximum current selectivity of <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(5.80\times 10^{3}\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>5.80</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>3</mn> </msup> </mrow> </math></EquationSource> </InlineEquation> when distinguishing it from another with relative dielectric constant of 10. In addition, the sensor demonstrates linear current and threshold voltage responses with respect to the density of charged biomolecules across all operating conditions. The results also highlight the role of structural parameters such as fill factor, steric hindrance, and cavity size, offering insights for future optimization in practical biosensing applications. Finally, benchmarking results confirm that the proposed design outperforms previously reported biosensors by more than one order of magnitude in current sensitivity for gelatin detection, while maintaining low-voltage operation.</p>

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Dual-Material Double Gate GaAsSb/InGaAs Heterojunction TFET with Low-k Oxide Layer on Si Substrate for Label-free Biosensor Application: A Simulation Study

  • 期刊论文

  • 发表日期：

    2025年10月21日

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  • Zhanshuo Zhang,
  • Yunhe Guan,
  • Weihan Sun,
  • Tongqing Yan,
  • Haotong Han,
  • Haifeng Chen,
  • Feng Liang

摘要

This paper presents a novel biosensor based on a dual-material double-gate GaAsSb/InGaAs heterojunction tunnel FET with a low-k dielectric layer on a silicon substrate. Calibrated TCAD simulations demonstrate that the proposed structure achieves enhanced sensitivity and power efficiency compared to conventional single-gate or high-k designs. Key findings show that the biosensor exhibits high sensing characteristic in response to biomolecular charge and dielectric constant, with tunable performance under different bias conditions. Specifically, at a drain voltage of 0.5 V, the proposed biosensor achieves a maximum current sensitivity of \(1.56\times 10^{5}\) 1.56 × 10 5 when detecting neutral biomolecule with a relative dielectric constant of 5, and a maximum current selectivity of \(5.80\times 10^{3}\) 5.80 × 10 3 when distinguishing it from another with relative dielectric constant of 10. In addition, the sensor demonstrates linear current and threshold voltage responses with respect to the density of charged biomolecules across all operating conditions. The results also highlight the role of structural parameters such as fill factor, steric hindrance, and cavity size, offering insights for future optimization in practical biosensing applications. Finally, benchmarking results confirm that the proposed design outperforms previously reported biosensors by more than one order of magnitude in current sensitivity for gelatin detection, while maintaining low-voltage operation.