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<p>In recent times, wide bandgap semiconductor p-n heterostructure based ultraviolet photodetectors (UV PDs) engrossed the researchers to fabricate in cost-effective routes to utilize in the next generation optoelectronics field. In this work, we have demonstrated the UV photo detection using In/n-TiO<sub>2</sub> nano belts (NBs)/p-Si architecture. GIXRD scan confirmed the formation of TiO<sub>2</sub> NBs film in the anatase phase. FESEM images confirmed the typical surface morphology of TiO<sub>2</sub> that comprises plenty of NBs with an average length of 157.4&#xa0;nm and width of 80.5&#xa0;nm. XPS results confirmed the composition of the expected elements as well as BE states of Ti 2p, O1s, Si 2p and C1s states. The UV PD parameters were interpreted with the help of J-V under dark/UV light illumination, EQE, D<sup>*</sup>, responsivity and temporal (I-t) data. At 7&#xa0;V of 375&#xa0;nm illumination, the constructed In/n-TiO<sub>2</sub> NBs/p-Si UV PD device exhibited reasonable responsivity of 1.06 AW<sup>−1</sup>, EQE of 351% and D<sup>*</sup> of 4.4 × 10<sup>12</sup> Jones, respectively. At 5&#xa0;V of 370&#xa0;nm, the I-t data is extracted from In/n-TiO<sub>2</sub> NBs/p-Si PD device displayed faster rise times and fall times of 400&#xa0;ms and 260&#xa0;ms. On the other hand, at 7&#xa0;V of 380&#xa0;nm UV light illumination, the rise and fall times of 630&#xa0;ms and 130&#xa0;ms were calculated. Thus, the fabricated In/n-TiO<sub>2</sub>NBs/p-Si PD heterojunction showed reasonable photo detection parameters by means of cost-effective spin coating and conventional electron beam evaporation techniques validates that the TiO<sub>2</sub> NBs based PDs have pronounced prospective in UV sensing applications of the near future.</p>

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Improved Ultraviolet Photodetector Performance using Sol–Gel Spin Coated Cost-Effective TiO2 Nano Belts on p-Si

  • 期刊论文

  • 发表日期：

    2025年11月13日

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  • Nallabala Nanda Kumar Reddy,
  • Vasudeva Reddy Minnam Reddy,
  • C. Yuvaraj,
  • M. Ramprasad Reddy,
  • V. Manjunath,
  • Kukkambakam Chandramohan,
  • Ashis K. Manna,
  • Ayman A. Ghfar,
  • R. Ravanamma,
  • P. Rosaiah,
  • Muthukonda Venkatakrishnan Shankar,
  • Salh Alhammadi,
  • Sunil Singh Kushvaha

摘要

In recent times, wide bandgap semiconductor p-n heterostructure based ultraviolet photodetectors (UV PDs) engrossed the researchers to fabricate in cost-effective routes to utilize in the next generation optoelectronics field. In this work, we have demonstrated the UV photo detection using In/n-TiO2 nano belts (NBs)/p-Si architecture. GIXRD scan confirmed the formation of TiO2 NBs film in the anatase phase. FESEM images confirmed the typical surface morphology of TiO2 that comprises plenty of NBs with an average length of 157.4 nm and width of 80.5 nm. XPS results confirmed the composition of the expected elements as well as BE states of Ti 2p, O1s, Si 2p and C1s states. The UV PD parameters were interpreted with the help of J-V under dark/UV light illumination, EQE, D*, responsivity and temporal (I-t) data. At 7 V of 375 nm illumination, the constructed In/n-TiO2 NBs/p-Si UV PD device exhibited reasonable responsivity of 1.06 AW−1, EQE of 351% and D* of 4.4 × 1012 Jones, respectively. At 5 V of 370 nm, the I-t data is extracted from In/n-TiO2 NBs/p-Si PD device displayed faster rise times and fall times of 400 ms and 260 ms. On the other hand, at 7 V of 380 nm UV light illumination, the rise and fall times of 630 ms and 130 ms were calculated. Thus, the fabricated In/n-TiO2NBs/p-Si PD heterojunction showed reasonable photo detection parameters by means of cost-effective spin coating and conventional electron beam evaporation techniques validates that the TiO2 NBs based PDs have pronounced prospective in UV sensing applications of the near future.