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<p>In this work, the extended-source heterostructure vertical tunnel FET (ES-Hetero-VTFET-pH) is characterized as a pH sensor that improves linearity and sensing performance capabilities. To improve the carrier tunnelling across the heterojunction between the source (Si) and the GaSb channel, the source region incorporates a low bandgap material known as GaSb. To simulate the pH sensor in the SILVACO TCAD, the pH model has been developed, which shows the relation between the interface charge density and the density of states of the semiconductor material. With heterojunction, the sensitivity reported in this article is more than 100&#xa0;mV/pH, which is also improved using a gate stack structure in the proposed pH sensor. Furthermore, the linearity of the device has been evaluated using IIP3, IMD3, VIP2, VIP3 and gm2, gm3.</p>

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pH Sensing and Linearity Performance Investigation of Source Extending Heterostructure Vertical TFET

  • 期刊论文

  • 发表日期：

    2025年10月4日

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  • Randheer Kumar Ravi,
  • Meena Panchore

摘要

In this work, the extended-source heterostructure vertical tunnel FET (ES-Hetero-VTFET-pH) is characterized as a pH sensor that improves linearity and sensing performance capabilities. To improve the carrier tunnelling across the heterojunction between the source (Si) and the GaSb channel, the source region incorporates a low bandgap material known as GaSb. To simulate the pH sensor in the SILVACO TCAD, the pH model has been developed, which shows the relation between the interface charge density and the density of states of the semiconductor material. With heterojunction, the sensitivity reported in this article is more than 100 mV/pH, which is also improved using a gate stack structure in the proposed pH sensor. Furthermore, the linearity of the device has been evaluated using IIP3, IMD3, VIP2, VIP3 and gm2, gm3.