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<p>Short-channel effects (SCEs) and mobility degradation remain significant barriers to MOSFET scaling. This study proposes novel asymmetric dual oxide MOSFET structures with a 20&#xa0;nm gate length, utilizing different gate oxide materials (TiO₂ and HfO₂) and both single and dual metal gate configurations. These designs are optimized through gate work function engineering to enhance device performance. Simulations using Silvaco TCAD confirm that the proposed structures particularly the Dual Metal Asymmetric Dual Oxide (DMADO) configuration offer significant improvements in ON current, switching efficiency, and suppression of short-channel effects. The results indicate the potential of these architectures for future high-performance, low-power nanoelectronic applications.</p>

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TCAD-Based Analysis of a Novel Dual Dielectric Gate MOSFET for High-Speed Applications

  • 期刊论文

  • 发表日期：

    2025年7月16日

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  • Ahmed S. Al-Jawadi,
  • Mohammad Tariq Yaseen,
  • Qais Thanon Algwari

摘要

Short-channel effects (SCEs) and mobility degradation remain significant barriers to MOSFET scaling. This study proposes novel asymmetric dual oxide MOSFET structures with a 20 nm gate length, utilizing different gate oxide materials (TiO₂ and HfO₂) and both single and dual metal gate configurations. These designs are optimized through gate work function engineering to enhance device performance. Simulations using Silvaco TCAD confirm that the proposed structures particularly the Dual Metal Asymmetric Dual Oxide (DMADO) configuration offer significant improvements in ON current, switching efficiency, and suppression of short-channel effects. The results indicate the potential of these architectures for future high-performance, low-power nanoelectronic applications.