<p>The current work aims to fabricate of futuristic nanocomposites films based on poly-methyl methacrylate (PMMA) filled with silicon carbide (SiC) and zinc oxide(ZnO) nanostructures to apply in many advanced optical fields. The optical, morphological, microstructure, and electronic features of (PMMA-SiC-ZnO) nanocomposites films are examined. The results demonstrated that the PMMA absorption increases of 81.1% at λ = 360&#xa0;nm when the SiC-ZnO NPs content increased to 2.8 wt.%. The transmittance decreased of 23.7% at λ = 360&#xa0;nm, these results making the (PMMA-SiC-ZnO) films as promising nanomaterials for optical and nanoelectronics fields. The energy gap reduced from 3.5&#xa0;eV to 3.03&#xa0;eV with growing SiC-ZnO NPs content to 2.8 wt.%. The other optical parameters were improved with rising of SiC-ZnO NPs content. The results of electronic properties showed to enhance the electronic factors of PMMA by adding the SiC-ZnO NPs. The obtained results confirmed that the nanocomposites films of (PMMA-SiC-ZnO) are promising nanosystem for development of nanoelectronics and optical fields.</p>

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Ameliorating and Tuning the Microstructure, Electronic and Optical Features of PMMA-SiC-ZnO Futuristic Nanostructures for Tailored Nanoelectronics Applications

  • Ali S. Hasan,
  • Mohammed H. Abbas,
  • Ahmed Hashim,
  • Ahmed Ehsan Jassem,
  • Mohammed H. Al-maamori,
  • Hussein. M. Khalid,
  • Zinah S. Hasan,
  • Zahraa S. Alameer

摘要

The current work aims to fabricate of futuristic nanocomposites films based on poly-methyl methacrylate (PMMA) filled with silicon carbide (SiC) and zinc oxide(ZnO) nanostructures to apply in many advanced optical fields. The optical, morphological, microstructure, and electronic features of (PMMA-SiC-ZnO) nanocomposites films are examined. The results demonstrated that the PMMA absorption increases of 81.1% at λ = 360 nm when the SiC-ZnO NPs content increased to 2.8 wt.%. The transmittance decreased of 23.7% at λ = 360 nm, these results making the (PMMA-SiC-ZnO) films as promising nanomaterials for optical and nanoelectronics fields. The energy gap reduced from 3.5 eV to 3.03 eV with growing SiC-ZnO NPs content to 2.8 wt.%. The other optical parameters were improved with rising of SiC-ZnO NPs content. The results of electronic properties showed to enhance the electronic factors of PMMA by adding the SiC-ZnO NPs. The obtained results confirmed that the nanocomposites films of (PMMA-SiC-ZnO) are promising nanosystem for development of nanoelectronics and optical fields.