Scholarlink

<p>This study aims to investigate the behavior of aluminium oxide MOS capacitors under both high and low frequencies and to evaluate the changes in their electrical and dielectric properties due to temperature variations. The MOS capacitors were fabricated using a sputtering technique. To analyze the frequency effects, capacitance–voltage (<i>C-V</i>) and conductance-voltage (<i>G-V</i>) measurements were conducted at both high and low frequencies. Additionally, to study the influence of temperature, <i>C-V</i> and <i>G-V</i> measurements were carried out across a temperature range of 293&#xa0;K to 393&#xa0;K. From the experimental data, critical device parameters such as the Fermi energy level (<i>E</i><sub><i>F</i></sub>), barrier height (<i>Φ</i><sub><i>B</i></sub>), maximum electric field (<i>Eₘ</i>), and dielectric properties (<i>ε′, ε″,</i> and <i>tan δ</i>) were calculated. The deviations observed in the <i>C-V</i> curves were attributed to frequency-dependent interface states and boundary traps, highlighting the complex dynamics of charge trapping and surface states. Interestingly, both <i>E</i><sub><i>F</i></sub> and <i>Φ</i><sub><i>B</i></sub> were found to increase with temperature, a phenomenon that diverges from typical literature expectations and could be linked to the presence of interface defects. Moreover, at high frequencies, an increase in the dielectric loss factor (<i>tan δ</i>) and dielectric constants (<i>ε′ and ε′′</i>) was observed, indicating enhanced charge carrier mobility at elevated temperatures. This results in improved electrical conductivity and a reduction in resistance, which aligns with findings from previous studies. In summary, the strong sensitivity of aluminium oxide MOS capacitors to changes in temperature and frequency, along with significant variations in their dielectric properties, underscores their potential for use in temperature sensors, particularly within lower temperature ranges.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

The Effects of Temperature and Frequency on the Electrical and Dielectric Properties of Al2O3 Structure

  • 期刊论文

  • 发表日期：

    2025年5月8日

查看全文
  • Ramazan Lok

摘要

This study aims to investigate the behavior of aluminium oxide MOS capacitors under both high and low frequencies and to evaluate the changes in their electrical and dielectric properties due to temperature variations. The MOS capacitors were fabricated using a sputtering technique. To analyze the frequency effects, capacitance–voltage (C-V) and conductance-voltage (G-V) measurements were conducted at both high and low frequencies. Additionally, to study the influence of temperature, C-V and G-V measurements were carried out across a temperature range of 293 K to 393 K. From the experimental data, critical device parameters such as the Fermi energy level (EF), barrier height (ΦB), maximum electric field (Eₘ), and dielectric properties (ε′, ε″, and tan δ) were calculated. The deviations observed in the C-V curves were attributed to frequency-dependent interface states and boundary traps, highlighting the complex dynamics of charge trapping and surface states. Interestingly, both EF and ΦB were found to increase with temperature, a phenomenon that diverges from typical literature expectations and could be linked to the presence of interface defects. Moreover, at high frequencies, an increase in the dielectric loss factor (tan δ) and dielectric constants (ε′ and ε′′) was observed, indicating enhanced charge carrier mobility at elevated temperatures. This results in improved electrical conductivity and a reduction in resistance, which aligns with findings from previous studies. In summary, the strong sensitivity of aluminium oxide MOS capacitors to changes in temperature and frequency, along with significant variations in their dielectric properties, underscores their potential for use in temperature sensors, particularly within lower temperature ranges.