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<p>This study focuses on designing and evaluating new nanostructures that combine polystyrene (PS), silicon carbide (SiC) and platinum silicide (PtSi). These nanostructures possess qualities that make them suitable, for applications in optoelectronics. The research explores the optimization, structural characteristics and electronic properties of PS/SiC/PtSi nanostructures. The findings reveal improvements in both the structure and electronic features of polystyrene when incorporating SiC/PtSi nanostructures. This demonstrates the potential of PS/SiC/PtSi nanostructures for electronics and photonics applications. Additionally the presence of PtSi/SiC leads to reduce in the energy gap of PS from 5.004 eV to 2.979 eV highlighting the relevance of these nanostructures for electronic devices. The electronic parameters of PS also exhibit enhancements when doped with SiC/PtSi nanostructures. Overall these results affirm the importance and promise of PS/SiC/PtSi nanostructures, in the field of nanoelectronics and photonics.</p>

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Tuning and Ameliorating the Microstructure and Electronic Features of SiC/PtSi Promising Nanostructures Doped Optical Material for Multifunctional Optoelectronics Applications

  • 期刊论文

  • 发表日期：

    2025年5月2日

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  • Ali S. Hasan,
  • Ahmed Hashim,
  • Ahmed Ehsan Jassem,
  • Mohammed H. Al-maamori,
  • Yasir A. Alkawaz,
  • Zahraa S. Alameer

摘要

This study focuses on designing and evaluating new nanostructures that combine polystyrene (PS), silicon carbide (SiC) and platinum silicide (PtSi). These nanostructures possess qualities that make them suitable, for applications in optoelectronics. The research explores the optimization, structural characteristics and electronic properties of PS/SiC/PtSi nanostructures. The findings reveal improvements in both the structure and electronic features of polystyrene when incorporating SiC/PtSi nanostructures. This demonstrates the potential of PS/SiC/PtSi nanostructures for electronics and photonics applications. Additionally the presence of PtSi/SiC leads to reduce in the energy gap of PS from 5.004 eV to 2.979 eV highlighting the relevance of these nanostructures for electronic devices. The electronic parameters of PS also exhibit enhancements when doped with SiC/PtSi nanostructures. Overall these results affirm the importance and promise of PS/SiC/PtSi nanostructures, in the field of nanoelectronics and photonics.