Performance Optimization of Cost-Effective Hole Transport Layer Free Perovskite Solar Cell by Numerical Simulation
摘要
Metal-halide Perovskite solar cells hold great potential to become one of the excellent future photovoltaic equipment due to their desirable characteristics. However, some difficulties like stability, high manufacturing costs, and toxicity (lead-based PSCs) inhibit their commercial production. The lead-free compound Methyl ammonium tin bromide (MASnBr3) is drawing significant attention as an extremely enabling absorber layer in perovskite device architecture. In the present research work, we have developed a wide band gap HTL-free perovskite solar cell with Au used as metal back contact and cadmium sulfide (CdS) serving as an electron transport layer. In the present research SCAPS-1D software is used to declare the effect of various parameters, such as thickness, doping density, and defect density of the absorber and electron transport layers that significantly affect the power conversion efficiency. The interface MASnBr3/CdS defect density, corresponding diffusion length, carrier lifetime, and their impact on PCE have also been investigated. However, the optimized novel structure device Glass/FTO/CdS/MASnBr3/Au with a theoretical PCE of 27.37% has been proposed. The device has an open circuit voltage of 0.99 (V), a short circuit current density of 32.31 (mA/cm2), and a fill factor of 85.56 (%).