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<p>Aluminium-assisted chemical etching (AACE) process employs Al catalyst to synthesize nanoporous black silicon (b-Si). In this paper, the composition of the etching solution (hydrofluoric acid (HF) + hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) + deionized water (H<sub>2</sub>O)) is varied to control the etching rate and hence the properties of the as-fabricated nanoporous b-Si. There is a significant variation in the surface morphology, the optical and electrical characteristics of the b-Si nanopores by varying the volume concentration of H<sub>2</sub>O<sub>2</sub> (1–10&#xa0;ml) in a fixed volume concentration (10&#xa0;ml) each of HF and deionized water (H<sub>2</sub>O). The b-Si nanopores exhibit an average depth of 436&#xa0;nm, surface coverage of 45.2% and root mean square surface roughness of 35.7&#xa0;nm when the nanoporous b-Si is fabricated by using Al catalyst thickness of 24&#xa0;nm and chemical composition of HF-H<sub>2</sub>O<sub>2</sub>-H<sub>2</sub>O (10–1-10&#xa0;ml). The lowest value of average reflection (R<sub>avg</sub>) from the surface of the as-fabricated nanoporous b-Si is 5.7% within 300–1100&#xa0;nm wavelength range. The electrical parameters such as the sheet resistance, the hole mobility and the hole concentrations are 279.6 Ω/sq, 170 cm<sup>2</sup>/V.s and 3.33 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup> respectively. A lower value of R<sub>avg</sub> for the nanoporous b-Si is vital for photovoltaic (PV) cells and photosensor applications.</p>

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Influence of the Etching Solution Composition on the Properties of Nanoporous Black Silicon Fabricated Via Aluminium-Assisted Chemical Etching

  • 期刊论文

  • 发表日期：

    2025年3月6日

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  • Shahnawaz Uddin,
  • Md. Roslan Hashim,
  • Mohd Zamir Pakhuruddin

摘要

Aluminium-assisted chemical etching (AACE) process employs Al catalyst to synthesize nanoporous black silicon (b-Si). In this paper, the composition of the etching solution (hydrofluoric acid (HF) + hydrogen peroxide (H2O2) + deionized water (H2O)) is varied to control the etching rate and hence the properties of the as-fabricated nanoporous b-Si. There is a significant variation in the surface morphology, the optical and electrical characteristics of the b-Si nanopores by varying the volume concentration of H2O2 (1–10 ml) in a fixed volume concentration (10 ml) each of HF and deionized water (H2O). The b-Si nanopores exhibit an average depth of 436 nm, surface coverage of 45.2% and root mean square surface roughness of 35.7 nm when the nanoporous b-Si is fabricated by using Al catalyst thickness of 24 nm and chemical composition of HF-H2O2-H2O (10–1-10 ml). The lowest value of average reflection (Ravg) from the surface of the as-fabricated nanoporous b-Si is 5.7% within 300–1100 nm wavelength range. The electrical parameters such as the sheet resistance, the hole mobility and the hole concentrations are 279.6 Ω/sq, 170 cm2/V.s and 3.33 × 1015 cm−3 respectively. A lower value of Ravg for the nanoporous b-Si is vital for photovoltaic (PV) cells and photosensor applications.