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<p>A comprehensive device simulation model for the n-type Passivated Emitter and Rear Cell (n-PERC) has been developed using Silvaco TCAD for conducting in-depth investigations into the intricate relationships between various materials and device parameters and their consequent impact on the overall performance characteristics of the solar cell. Important research is conducted to optimize several design parameters, including the base doping, the thickness of the emitter, the rear side contact to non-contact ratio and others, after identifying the possibility of a notable increase in the device's performance. The incorporation of hydrogenated silicon carbide (SiC:H), a wide bandgap material, as the window layer engenders a substantial enhancement in the electrical performance of the device. Due to its wider bandgap, SiC provides enhanced transparency, allowing photons to effectively reach the bulk. Additionally, SiC forms an effective heterojunction with Si, ensuring favorable band alignment that facilitates efficient carrier separation and transport. The author's exclusive emphasis on silicon carbide (SiC) as window layer and coupled with the meticulous adjustment of various design parameters such as doping of emitter and bulk layers, thickness of emitter and ratio of contact to non-contact area at rear side demonstrates that a significant enhancement in efficiency reaching up to 25.67% can be realized.</p>

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Design and Analysis of Passivated n-Si Solar Cell Employing SiC Window Layer

  • 期刊论文

  • 发表日期：

    2025年2月24日

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  • Sudipta Banerjee,
  • Mukul K. Das,
  • Tauseef Ahmed,
  • Heranmoy Maity,
  • Himadri Sekhar Das

摘要

A comprehensive device simulation model for the n-type Passivated Emitter and Rear Cell (n-PERC) has been developed using Silvaco TCAD for conducting in-depth investigations into the intricate relationships between various materials and device parameters and their consequent impact on the overall performance characteristics of the solar cell. Important research is conducted to optimize several design parameters, including the base doping, the thickness of the emitter, the rear side contact to non-contact ratio and others, after identifying the possibility of a notable increase in the device's performance. The incorporation of hydrogenated silicon carbide (SiC:H), a wide bandgap material, as the window layer engenders a substantial enhancement in the electrical performance of the device. Due to its wider bandgap, SiC provides enhanced transparency, allowing photons to effectively reach the bulk. Additionally, SiC forms an effective heterojunction with Si, ensuring favorable band alignment that facilitates efficient carrier separation and transport. The author's exclusive emphasis on silicon carbide (SiC) as window layer and coupled with the meticulous adjustment of various design parameters such as doping of emitter and bulk layers, thickness of emitter and ratio of contact to non-contact area at rear side demonstrates that a significant enhancement in efficiency reaching up to 25.67% can be realized.