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<p>The increasing global demand for semiconductors, driven by advancements in technologies such as 5G, artificial intelligence, electric vehicles, and consumer electronics, has underscored the need to produce larger Czochralski (CZ) silicon wafers. Larger wafers enable higher chip yields per wafer, improving manufacturing efficiency and reducing costs. This study proposes a novel "top cooling" system to further increase the growth speed of large-diameter silicon wafers while maintaining high crystal quality. Using advanced simulation modeling, the study demonstrates the significant impact of top cooling on reducing temperature and crystal-front deflection, particularly for larger wafers. The findings highlight the potential of this cooling method to address silicon shortages by improving production efficiency without sacrificing material quality.</p>

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Top Cooling and Heat Transfer Dynamics in the Growth of Large Silicon Crystals Using the CZ Method

  • 期刊论文

  • 发表日期：

    2025年2月17日

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  • Yi-Jen Huang,
  • Amir Reza Ansari Dezfoli

摘要

The increasing global demand for semiconductors, driven by advancements in technologies such as 5G, artificial intelligence, electric vehicles, and consumer electronics, has underscored the need to produce larger Czochralski (CZ) silicon wafers. Larger wafers enable higher chip yields per wafer, improving manufacturing efficiency and reducing costs. This study proposes a novel "top cooling" system to further increase the growth speed of large-diameter silicon wafers while maintaining high crystal quality. Using advanced simulation modeling, the study demonstrates the significant impact of top cooling on reducing temperature and crystal-front deflection, particularly for larger wafers. The findings highlight the potential of this cooling method to address silicon shortages by improving production efficiency without sacrificing material quality.