<p>In order to enhance the performance of silicon in optoelectronic applications, it is crucial to improve its optical and morphological properties. This study focuses on the use of silicon nanowires (SiNWs) co-doped with Y³⁺ and Yb³⁺ to achieve this objective. Silicon nanowires (SiNWs) were grown directly from n-(100) single crystal silicon through a silver-assisted electrochemical etching method, all conducted at room temperature. SiNWs co-doped with Y³⁺ and Yb³⁺ were prepared by spin coating method. The morphology, microstructure, and the photoluminescence properties of the samples were characterized and analyzed. Energy dispersive X-ray (EDX) analysis confirms the chemical composition of the SiNWs doped with (Y³⁺, Yb³⁺), and proves the effective introduction of dopant elements into the SiNWs host lattice. The X-ray diffraction (XRD) analysis indicates the formation of the crystalline phases of YbSi, and YbYSi. SEM micrographs display arrays of parallel nanowires, each with an average length of approximately 39&#xa0;µm following a 90&#xa0;min process. PL characterization of Yb³⁺ and Yb³⁺/Y³⁺ is performed through emission spectra. An intense Near Infra-Red PL emission was observed from the Yb³⁺, and this emission was improved with Yb³⁺/Y³⁺ co-doped. The excitation wavelength is 980&#xa0;nm.</p>