Scholarlink

<p>HfO<sub>2</sub>-based ferroelectric thin films have attracted attention in diverse applications, including nonvolatile memory, energy storage, and compute-in-memory technologies. Controlling the transition between polar orthorhombic and nonpolar tetragonal phases in HfO<sub>2</sub> is of particular interest; however, it remains a challenge owing to the comparable phase energies of these structures. In this study, we engineered an Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO)/VO<sub>2</sub> heterostructure, leveraging the reconfigurable interfacial strain that arises during the metal–insulator transition (MIT) in the VO<sub>2</sub> layer. A transformation in the hysteresis loops from ferroelectric to antiferroelectric-like behavior was observed within the heterostructure as the temperature approaches the MIT point of VO<sub>2</sub>. This orthorhombic-to-tetragonal phase transition in the HZO layer was attributed to the strain induced by the structural transformation of VO<sub>2</sub> from a low-temperature monoclinic phase to a high-temperature tetragonal phase, as confirmed using in situ transmission electron microscopy. This paper presents a novel approach for phase control in HfO<sub>2</sub>-based thin films, paving the way for advanced material design and device engineering.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Phase transition in Hf0.5Zr0.5O2 ferroelectric thin film induced by metal–insulator transition of VO2

  • 期刊论文

  • 发表日期：

    2025年8月20日

查看全文
  • Jiajia Liao,
  • Xiaolin Wang,
  • Zhipeng Wang,
  • Mingsheng Ma,
  • Qijun Yang,
  • Fei Yan,
  • Jiangheng Yang,
  • Keyu Bao,
  • Borui Wang,
  • Sirui Zhang,
  • Yichun Zhou,
  • Min Liao

摘要

HfO2-based ferroelectric thin films have attracted attention in diverse applications, including nonvolatile memory, energy storage, and compute-in-memory technologies. Controlling the transition between polar orthorhombic and nonpolar tetragonal phases in HfO2 is of particular interest; however, it remains a challenge owing to the comparable phase energies of these structures. In this study, we engineered an Hf0.5Zr0.5O2 (HZO)/VO2 heterostructure, leveraging the reconfigurable interfacial strain that arises during the metal–insulator transition (MIT) in the VO2 layer. A transformation in the hysteresis loops from ferroelectric to antiferroelectric-like behavior was observed within the heterostructure as the temperature approaches the MIT point of VO2. This orthorhombic-to-tetragonal phase transition in the HZO layer was attributed to the strain induced by the structural transformation of VO2 from a low-temperature monoclinic phase to a high-temperature tetragonal phase, as confirmed using in situ transmission electron microscopy. This paper presents a novel approach for phase control in HfO2-based thin films, paving the way for advanced material design and device engineering.

Graphical abstract