<p>High-temperature piezoelectric ceramics are critical for aerospace and other advanced applications, yet achieving high sensitivity and stability under elevated temperatures remains challenging. In this study, we employ a multi-element co-doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi₄Ti₃O₁₂ (BIT)-based ceramics. Using a solid-state reaction method, W⁶⁺/Nb⁵⁺/Ta⁵⁺/Sb³⁺ non-equivalently co-doped BIT ceramics were synthesized, achieving a high piezoelectric coefficient (<i>d</i>₃₃) of 35&#xa0;pC&#xa0;N⁻¹, an elevated Curie temperature of 687&#xa0;°C, and an increased resistivity of 2.9 × 10⁶&#xa0;Ω&#xa0;cm at an optimal doping level of <i>x</i> = 0.02. This study further reveals the impact of poling conditions on domain structure, providing new insights for enhancing piezoelectric properties through domain configuration. A second high-voltage, short-duration poling process promotes the formation of large domains, underscoring the role of domain rearrangement in augmenting piezoelectric activity. This work demonstrates the potential of BIT-based ceramics in high-temperature sensing and precision actuation applications, presenting a novel strategy for designing high-performance piezoelectric materials for extreme environments.</p> Graphical Abstract <p></p>