<p>The microelectronics industry is increasingly seeking freestanding multiferroic materials for the next generation of devices. Bismuth ferrite (BiFeO₃), known for its remarkable ferroelectric and antiferromagnetic properties at room temperature, holds great promise for multifunctional applications. However, current fabrication methods depend on Sr₃Al₂O₆ sacrificial layers that deteriorate under ambient conditions, which limits their practical use. In this study, we showcase the exceptional qualities of strontium cobalt oxide (SrCoO_2.5) as an innovative sacrificial layer for BiFeO₃. We successfully fabricated high-quality films of both BiFeO₃ and SrCoO_2.5 using pulsed laser deposition (PLD), and we achieved freestanding BiFeO₃ films through a careful chemical etching process that ensures precise quality control. Our investigation into the solubility and stability of SrCoO_2.5 reveals its advantages over Sr₃Al₂O₆, demonstrating enhanced durability while allowing long-term preservation of SrCoO_2.5. The resulting freestanding films exhibit excellent crystallinity and surface smoothness, paving the way for their integration into next-generation electronic devices. This research not only advances the preparation of high-quality freestanding BiFeO₃ but also highlights the potential of using SrCoO_2.5 as a sacrificial layer in various perovskite oxide thin films, which are suitable for sensors, actuators, and memory devices.</p> Graphical abstract <p></p>