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<p>Using the one-dimensional Solar Cell Capacitance Simulator (SCAPS)-1D software, this work suggests a numerical analysis of BaZrSe<sub>3</sub> as a viable absorbing material for solar cells. Chalcogenide perovskites are a good example of absorber material-based solar cells since they have the ability to address stability and toxicity issues that are present in traditional perovskites. FTO (Fluorine-doped Tin Oxide)/ CdS (ETL; Electron Transport Layer)/BaZrSe<sub>3</sub> (Absorber layer)/MoO<sub>3</sub> (HTL; Hole Transport Layer)/Au (metal back contact) has been offered as a completed architecture. The optimal performance of this simulation is could be on BaZrSe<sub>3</sub> absorber layer thickness of 0.8μm, bandgap value of 1.30 eV, the highest PCE (maximum Power Conversion Efficiency) is found to be of 17.9411%, FF (fill factor) of 77.2285%, V<sub>oc</sub> (Open Circuit Voltage) of 0.792695 V, and J<sub>sc</sub> (Short Circuit current density) of 29.306515 mA/cm<sup>2</sup>.</p>

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Optimization of new inorganic BaZrSe3 based perovskite solar cell by numerical simulation using SCAPS-1D

  • 期刊论文

  • 发表日期：

    2026年7月10日

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  • Zouhair El Jouad,
  • Hatim Machkour,
  • Nouhaila Benaissa,
  • Lahcen Nait Aouzal,
  • Mohamed El Boughdadi,
  • Taoufik Garmim,
  • Ahmed Louardi,
  • Mohamed Monkade

摘要

Using the one-dimensional Solar Cell Capacitance Simulator (SCAPS)-1D software, this work suggests a numerical analysis of BaZrSe3 as a viable absorbing material for solar cells. Chalcogenide perovskites are a good example of absorber material-based solar cells since they have the ability to address stability and toxicity issues that are present in traditional perovskites. FTO (Fluorine-doped Tin Oxide)/ CdS (ETL; Electron Transport Layer)/BaZrSe3 (Absorber layer)/MoO3 (HTL; Hole Transport Layer)/Au (metal back contact) has been offered as a completed architecture. The optimal performance of this simulation is could be on BaZrSe3 absorber layer thickness of 0.8μm, bandgap value of 1.30 eV, the highest PCE (maximum Power Conversion Efficiency) is found to be of 17.9411%, FF (fill factor) of 77.2285%, Voc (Open Circuit Voltage) of 0.792695 V, and Jsc (Short Circuit current density) of 29.306515 mA/cm2.