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<p>The increasing global energy demand underscores the urgent need for sustainable and efficient photovoltaic technologies. This study investigates the optoelectronic performance of a lead-free perovskite-based solar cell using SCAPS-1D simulations. The proposed heterostructure, FTO/TiO<sub>2</sub>/Cs<sub>2</sub>TiBr<sub>6</sub>/FA<sub>4</sub>GeSbCl<sub>12</sub>/Cu<sub>2</sub>O/Au, combines the advantageous properties of the double absorber system FA<sub>4</sub>GeSbCl<sub>12</sub> and Cs<sub>2</sub>TiBr<sub>6</sub> to enhance stability, light absorption, and charge transport. Layer thickness variation and doping effects were analyzed to optimize device performance. Results show that an optimized TiO<sub>2</sub> thickness (≤ 50&#xa0;nm) maximizes fill factor and efficiency, while Cu<sub>2</sub>O thickness beyond 50&#xa0;nm maintains consistent peak performance. FA<sub>4</sub>GeSbCl<sub>12</sub> shows optimal efficiency for 500–700&#xa0;nm thickness, achieving up to 18.05% power conversion efficiency (PCE). In contrast, excessive Cs<sub>2</sub>TiBr<sub>6</sub> thickness (&gt; 250&#xa0;nm) leads to significant performance drops. Additionally, moderate donor doping in FA<sub>4</sub>GeSbCl<sub>12</sub> sustains stability and minimizes recombination. The optimized configuration achieves a PCE of 22.39%, demonstrating that this tandem heterostructure offers a promising route for next-generation, lead-free, and high-efficiency perovskite solar cells.</p>

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SCAPS-1D simulation and optimization of lead-free Cs2TiBr6/FA4GeSbCl12-based double absorber perovskite solar cells for high-efficiency photovoltaic performance

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • Vinay Kumar Shukla,
  • Priyanka Srivastava,
  • R. K. Shukla,
  • Anjali Gupta,
  • Anchal Srivastava

摘要

The increasing global energy demand underscores the urgent need for sustainable and efficient photovoltaic technologies. This study investigates the optoelectronic performance of a lead-free perovskite-based solar cell using SCAPS-1D simulations. The proposed heterostructure, FTO/TiO2/Cs2TiBr6/FA4GeSbCl12/Cu2O/Au, combines the advantageous properties of the double absorber system FA4GeSbCl12 and Cs2TiBr6 to enhance stability, light absorption, and charge transport. Layer thickness variation and doping effects were analyzed to optimize device performance. Results show that an optimized TiO2 thickness (≤ 50 nm) maximizes fill factor and efficiency, while Cu2O thickness beyond 50 nm maintains consistent peak performance. FA4GeSbCl12 shows optimal efficiency for 500–700 nm thickness, achieving up to 18.05% power conversion efficiency (PCE). In contrast, excessive Cs2TiBr6 thickness (> 250 nm) leads to significant performance drops. Additionally, moderate donor doping in FA4GeSbCl12 sustains stability and minimizes recombination. The optimized configuration achieves a PCE of 22.39%, demonstrating that this tandem heterostructure offers a promising route for next-generation, lead-free, and high-efficiency perovskite solar cells.