<p>This study reports the impact of bromine doping on the optoelectronic and nonlinear properties of sol-gel synthesized CdO: La NPs. Concentration of Br was varied as 0, 3, and 7 wt%, while the La content was maintained at 5 wt%. Pure CdO, CdO: La and (La + Br) codoped CdO NPs exhibit (1 1 1) preferentially oriented cubic structure. CdO: La’s (1 1 1) peak intensity increased with Br doping up to 5 wt% and then decreased slightly. Br’s existence in the codoped samples was proved from EDS spectra. CdO: La’s optical transparency and band gap increased with Br addition up to 5 wt% and after that it slightly decreased. Greater sensitivity of CdO: La to oxygen vacancies with Br codoping alters its stoichiometric nature resulting in decreased resistivity. The 5 wt% Br doped sample achieved a minimum resistivity of 2.27 × 10<sup>− 4</sup> Ω-cm, demonstrating a high figure of merit value that validates its appropriateness for optical switching devices.</p>

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Nd: YAG laser assisted nonlinear optical and optoelectronic properties of (La + Br) codoped CdO nanoparticles

  • N. Arunkumar,
  • K. Devendran,
  • A. R. Balu,
  • Z. Delci,
  • M. Suganya,
  • V. Rajamani,
  • A. Vinith

摘要

This study reports the impact of bromine doping on the optoelectronic and nonlinear properties of sol-gel synthesized CdO: La NPs. Concentration of Br was varied as 0, 3, and 7 wt%, while the La content was maintained at 5 wt%. Pure CdO, CdO: La and (La + Br) codoped CdO NPs exhibit (1 1 1) preferentially oriented cubic structure. CdO: La’s (1 1 1) peak intensity increased with Br doping up to 5 wt% and then decreased slightly. Br’s existence in the codoped samples was proved from EDS spectra. CdO: La’s optical transparency and band gap increased with Br addition up to 5 wt% and after that it slightly decreased. Greater sensitivity of CdO: La to oxygen vacancies with Br codoping alters its stoichiometric nature resulting in decreased resistivity. The 5 wt% Br doped sample achieved a minimum resistivity of 2.27 × 10− 4 Ω-cm, demonstrating a high figure of merit value that validates its appropriateness for optical switching devices.