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<p>In recent years, the exploration of renewable power sources has underscored the pressing need for alternatives to conventional solar cell technologies, particularly those that rely on lead-based materials. Among these alternatives, lead-free organic perovskite (CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>) solar cells (PSC), have attracted widespread interest because of their promising efficiency and environmentally benign composition. This study seeks to offer an in-depth insight into how various design factors such as layer thickness, composition, and interfaces influence device efficiency. Our research specifically examines the effects of Electron Transport Layer (ETL) and Hole Transport Layer (HTL) materials, their thickness, the thickness of the active perovskite layer, energy band gap and defect density, as well as adjusting shunt and series resistances. By selecting and testing different ETL and HTL configurations, we aim to identify which materials most effectively facilitate electron and hole transport, thereby reducing recombination losses and improving power conversion efficiency (PCE). The optimization of design parameters done in this work has achieved an open-circuit voltage (Voc) of 1.254&#xa0;V, a short-circuit current density (Jsc) of 29.88&#xa0;mA/cm<sup>2</sup>, a fill factor (FF) of 84.63%, and an impressive power conversion efficiency (η) of 31.72%.</p>

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Optimization/performance analysis of CH3NH3SnI3 based perovskite solar cell

  • 期刊论文

  • 发表日期：

    2026年3月2日

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  • Archana Pandey,
  • Pranav Mishra,
  • Sujay Kumar Srivastava,
  • Medha Joshi

摘要

In recent years, the exploration of renewable power sources has underscored the pressing need for alternatives to conventional solar cell technologies, particularly those that rely on lead-based materials. Among these alternatives, lead-free organic perovskite (CH3NH3SnI3) solar cells (PSC), have attracted widespread interest because of their promising efficiency and environmentally benign composition. This study seeks to offer an in-depth insight into how various design factors such as layer thickness, composition, and interfaces influence device efficiency. Our research specifically examines the effects of Electron Transport Layer (ETL) and Hole Transport Layer (HTL) materials, their thickness, the thickness of the active perovskite layer, energy band gap and defect density, as well as adjusting shunt and series resistances. By selecting and testing different ETL and HTL configurations, we aim to identify which materials most effectively facilitate electron and hole transport, thereby reducing recombination losses and improving power conversion efficiency (PCE). The optimization of design parameters done in this work has achieved an open-circuit voltage (Voc) of 1.254 V, a short-circuit current density (Jsc) of 29.88 mA/cm2, a fill factor (FF) of 84.63%, and an impressive power conversion efficiency (η) of 31.72%.